Patents Represented by Attorney Willams, Morgan & Amerson, P.C.

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  • Enhancing structural integrity and defining critical dimensions of metallization systems of semiconductor devices by using ALD techniques
    Patent number: 8105943
    Abstract: During the patterning of sophisticated metallization systems, a damaged surface portion of a sensitive low-k dielectric material may be efficiently replaced by a well-controlled dielectric material, thereby enabling an adaptation of the material characteristics and/or the layer thickness of the replacement material. Thus, established lithography and etch techniques may be used in combination with reduced critical dimensions and dielectric materials of even further reduced permittivity.
    Type: Grant
    Filed: May 27, 2009
    Date of Patent: January 31, 2012
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Christof Streck, Volker Kahlert, John A. Iacoponi
  • Field effect transistor having a doped gate electrode with reduced gate depletion and method of forming the transistor
    Patent number: 7494872
    Abstract: By forming an implantation mask prior to the definition of the drain and the source areas, an effective decoupling of the gate dopant concentration from that of the drain and source concentrations is achieved. Moreover, after removal of the implantation mask, the lateral dimension of the gate electrode may be defined by well-established sidewall spacer techniques, thereby providing a scaling advantage with respect to conventional approaches based on photolithography and anisotropic etching.
    Type: Grant
    Filed: March 2, 2004
    Date of Patent: February 24, 2009
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Karsten Wieczorek, Thomas Feudel, Thorsten Kammler, Wolfgang Buchholtz