Abstract: In an X-ray lithographic system, high power X-ray illumination of photo-resist coated substrate members is accomplished by projecting a collimated X-ray beam, emitted from an extended area X-ray source, through the patterned apertures of an X-ray absorbent mask. Improved efficiency is achieved by limiting X-ray emission to the discrete portions of the extended area emission surface that corresponds to related patterned mask apertures.
Type:
Grant
Filed:
October 23, 1974
Date of Patent:
March 30, 1976
Assignee:
The United States of America as represented by the Secretary of the Air Force