Abstract: A method of fabricating a magnetoresistive tunnel junction including forming a thin, continuous layer of aluminum alloy on the surface of a first magnetic layer, the continuous layer of aluminum alloy including greater than 90% aluminum and traces of materials having atoms that are different from the atoms of the aluminum to produce grains which are smaller than grains of pure aluminum. The continuous layer of aluminum alloy is oxidized, nitridized, or both to produce a continuous layer of non-conductive material and a second magnetic layer is formed on the layer of non-conductive material.

Abstract: A non-volatile magneto-resistive memory positioned on a semiconductor substrate is shielded from stray magnetic fields by a passivation layer partially or completely surrounding the non-volatile magneto-resistive memory. The passivation layer includes non-conductive ferrite materials, such as Mn--Zn-Ferrite, Ni--Zn-Ferrite, MnFeO, CuFeO, FeO, or NiFeO, for shielding the non-volatile magneto-resistive memory from stray magnetic fields. The non-conductive ferrite materials may also be in the form of a layer which focuses internally generated magnetic fields on the non-volatile magneto-resistive memory to reduce power requirements.