Patents Represented by Attorney William J. Brady

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  • Method for doped shallow junction formation using direct gas-phase doping
    Patent number: 5599735
    Abstract: Halides of a dopant species may be used as a dopant gas source to form shallow doped junctions using a direct gas-phase doping (GPD) process. These halides can also be combined with a carrier gas. Some advantages over conventional gas-phase doping processes include shallower junctions, shorter process times, lower processing temperatures, and the elimination of a separate surface cleaning step for native oxide removal.
    Type: Grant
    Filed: August 1, 1994
    Date of Patent: February 4, 1997
    Assignee: Texas Instruments Incorporated
    Inventor: Mehrdad M. Moslehi