Abstract: The present invention relates to the fabrication of a boron carbide/boron semiconductor devices. The results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron carbide (B5C) acts as a p-type material. Both boron and boron carbide (B5C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth does not appear to be a requirement. We have doped boron carbide grown by plasma enhanced chemical vapor deposition. The source gas close-1,2-dicarbadecaborane (orthocarborane) was used to grow the boron carbide while nickelocene (Ni(C5H5)2) was used to introduce nickel into the growing film. The doping of nickel transformed a B5C material p-type relative to lightly doped n-type silicon to an n-type material. Both p-n heterojunction diodes and n-p heterojunction diodes with n- and p-type Si [1,1,1] respectively.

Abstract: A method and apparatus for allowing several applications to share a single video overlay resource via multiplexing are disclosed. The multiplexing is accomplished from the application end through a multiplexing abstraction layer provided to the developers of end applications as an application program interface. Through the application program interface, each application may, at any time, request, release, or modify the attributes of the video overlay device such as picture quality, tuning, source, etc. The application program interface provides all basic functionality of the hardware as accessible through other means including normal operating system support and device driver services.