Abstract: The relative timing of triggering switching events in a circuit block of an IC device is dynamically adjusted in response to fluctuations in device's supply voltage to minimize clock jitter caused by supply voltage noise. A control circuit monitors supply voltage fluctuations, and in response thereto dynamically phase-shifts a clock signal that triggers the switching events so that the switching events occur during relatively quiet time intervals in which fluctuations in the supply voltage are minimal.

Abstract: A memory includes a plurality of row segments, with each row segment having a number of memory cells coupled to a corresponding dataline segment pair. Dataline driver circuits are provided between row segments to buffer signals on adjacent dataline segments. A control circuit is coupled to at least one row segment, and provides control signals to the at least one row segment and to the dataline driver circuits.

Abstract: A semiconductor structure includes a carrier having a cavity formed in a top portion thereof, and a plurality of conductive contacts formed on a top surface of the carrier and positioned around the periphery of the cavity. A number of first coplanar dice are back-side mounted to a top surface of the cavity, and a number of second coplanar dice are flip-chip mounted to the first dice, wherein each of the first dice is electrically connected to two corresponding adjacent second dice to connect the dice in a cascade configuration. For some embodiments, selected dice are flip-chip mounted to the carrier. For other embodiments, selected dice are wire-bond connected to the carrier.

Abstract: A nitriding agent is introduced into selected regions of a semiconductor device. A metal such as, for instance, titanium is immediately deposited over the semiconductor device. A subsequent thermal annealing step induces selective reactions between the titanium and the underlying silicon, thereby resulting in the formation of a layer of titanium silicide within the selected regions, as well as a layer of titanium nitride. The layer of titanium nitride and unreacted portions of the layer of titanium are removed in a subsequent etching step, thereby leaving intact a layer of titanium silicide within the selected regions. A second annealing step converts the silicide into a substantially stoichiometric composition. The introduction of the nitriding agent into the selected regions significantly reduces the agglomeration of titanium during silicide formation, thereby resulting in a more uniform, and thus more conductive, silicide layer.