Abstract: The invention is a tunable RF MEMS switch developed with a BST dielectric at the contact interface. BST has a very high dielectric constant (>300) making it very appealing for RF MEMS capacitive switches. The tunable dielectric constant of BST provides a possibility of making linearly tunable MEMS capacitive switches. The capacitive tunable RF MEMS switch with a BST dielectric is disclosed showing its characterization and properties up to 40 GHz.
Type:
Grant
Filed:
March 14, 2006
Date of Patent:
August 31, 2010
Assignee:
nGimat Co.
Inventors:
Andrew Tye Hunt, Ioannis (John) Papapolymerou, Todd A. Polley, Guoan Wang