Abstract: In integrated circuits, resistors may be formed on the basis of a silicon/germanium material, thereby providing a reduced specific resistance which may allow reduced dimensions of the resistor elements. Furthermore, a reduced dopant concentration may be used which may allow an increased process window for adjusting resistance values while also reducing overall cycle times.

Abstract: Electromigration behavior in complex metallization systems of semiconductor devices may be enhanced at critical areas between a metal line and a via by locally forming a copper/silicon compound. In some illustrative embodiments, the formation of the copper/silicon compound may be combined with other treatments for cleaning the exposed surface areas and/or modifying the molecular structure thereof.

Abstract: A method includes receiving a first set of parameters associated with a plurality of die. A first die performance metric associated with a selected die is determined based on the first set of parameters. At least one neighborhood die performance metric associated with a set comprised of a plurality of die that neighbor the selected die is determined based on the first set of parameters. A second die performance metric is determined for the selected die based on the first die performance metric and the neighborhood die performance metric.

Abstract: By creating a temperature profile across a polishing pad, a respective temperature profile may be obtained in a substrate to be polished, which may result in a respective varying removal rate across the substrate for a chemically reactive slurry material or for an electro-chemically activated polishing process. Hence, highly sensitive materials, such as material comprising low-k dielectrics, may be efficiently polished with a high degree of controllability.

Abstract: A multi-function multi-hole rig including multiple machines for accomplishing various rig functions, e.g., drilling machine(s), tripping machine(s), casing machine(s), cementing machine(s), workover machine(s), etc., for drilling, completing and/or working over multiple wellbores without moving the rig. Rig functions may be performed one after the other and/or simultaneously, while allowing other functions related to completion and production to continue simultaneously.

Abstract: A multi-function multi-hole rig is disclosed which, in certain aspects, includes multiple machines for accomplishing rig functions, e.g. drilling machine(s), tripping machine(s), casing machine(s), and/or cementing machine(s), for producing multiple usable wellbores one after the other. This abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure and is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims, 37 C.F.R. 1.72(b).

Abstract: A method for estimating a state of a process implemented by a tool for fabricating workpieces includes collecting metrology data associated with a subset of workpieces processed in the tool. The collecting exhibits an irregular pattern. Metrology data associated with a selected state observation is received for a selected run of the process. A tuning factor for the selected run is determined based on the irregular pattern. The selected state observation is discounted based on the determined tuning factor. A state estimate of the process is determined based on the discounted selected state observation. At least one process tool operable to implement the process is controlled based on the state estimate.

Abstract: The present invention provides a method involving a media server, a wireless network, and at least one media client associated with at least one air interface with the wireless network. The method includes accessing first information indicative of at least one state of the at least one media client. The first information is provided by the at least one media client. The method also includes accessing second information indicative of resources associated with the at least one air interface. The second information is provided by the wireless network. The method further includes providing at least one feedback parameter to the media server. The at least one feedback parameter is formed based on the first and second information.

Abstract: The present disclosure is generally directed to centrifuge systems and methods for controlling centrifuge systems, wherein the systems in certain aspects are adapted for processing material, e.g., but not limited to drilling fluids with solids therein. One illustrative method includes providing a centrifuge system that is made up of, among other things, a bowl, a bowl motor system, a bowl variable frequency drive, a conveyor, a conveyor motor, a conveyor variable frequency drive, a pump, a pump motor, and a pump variable frequency drive. Additionally, the centrifuge system includes a control system that is adapted to control the bowl variable frequency drive, the conveyor variable frequency drive, and the pump variable frequency drive. The method includes controlling the centrifuge system in the G-force differential control mode by controlling the G-force on the bowl as the bowl is rotated by the bowl motor system so that the G-force on the bowl does not exceed a pre-set maximum G-force.

Abstract: An adjustable valve is disclosed which includes a plug body having at least one flow path defined therein and a choke cage positioned proximate the plug body, the choke cage comprising a plurality of openings to permit a flow of a fluid therethrough, the choke cage adapted to be used to regulate the flow of fluid through the flow path in the plug body.

Abstract: By providing a surface modification process prior to or during a self-limiting deposition process, the per se highly conformal deposition behavior may be selectively changed so as to obtain reliable coverage at specific surface areas, while significantly reducing or suppressing a deposition above unwanted surface areas, such as the bottom of a via in advanced metallization structures of highly scaled semiconductor devices.

Abstract: In a manufacturing strategy for providing high-k metal gate electrode structures in an early manufacturing stage, process-related non-uniformities during and after the patterning of the gate electrode structures may be reduced by providing a superior surface topography. To this end, the material loss in the isolation region may generally be reduced and a more symmetrical exposure to reactive etch atmospheres during the subsequent removal of the growth mask may be accomplished by providing an additional etch mask when removing the growth mask from the active regions of N-channel transistors, after the growth of the threshold adjusting semiconductor material on the active regions of the P-channel transistors.

Abstract: A unified test structure which is applicable for all levels of a semiconductor device including a current path chain having a first half chain and a second half chain, wherein each half chain comprises lower metallization segments, upper metallization segments, an insulating layer between the lower metallization segments and the upper metallization segments, and connection segments. Each of the connection segments is electrically connected to a contact region of one of the lower metallization segments and to a contact region of one of the upper metallization segments to thereby electrically connect the respective lower metallization segment and the respective upper metallization segment, and the first half chain and the second half chain are of different configuration.

Abstract: A three-dimensional double channel transistor configuration is provided in which a second channel region may be embedded into the body region of the transistor, thereby providing a three-state behavior, which may therefore increase functionality of conventional three-dimensional transistor architectures. The double channel three-dimensional transistors may be used for forming a static RAM cell with a reduced number of transistors, while also providing scalability by taking advantage of the enhanced controllability of FinFETS and nano pipe transistor architectures.

Abstract: A method, system, and apparatus for implementing a safe mode operation of an implantable medical system using impedance adjustment(s) are provided. A first impedance is provided to a lead. An indication of a possibility of a coupled energy is received. Based upon said indication, a second impedance associated with the lead to reduce the coupled energy is provided.

Abstract: By locally heating isolation trenches with different annealing conditions, a different magnitude of intrinsic stress may be obtained in different isolation trenches. In some illustrative embodiments, the different anneal temperature may be achieved on the basis of an appropriate mask layer, which may provide a patterned optical response for a lamp-based or laser-based anneal process. Consequently, the intrinsic stress of isolation trenches may be specifically adapted to the requirements of circuit elements, such as N-channel transistors and P-channel transistors.

Abstract: An asymmetric transistor configuration is disclosed in which asymmetric extension regions and/or halo regions may be combined with an asymmetric spacer structure which may be used to further adjust the overall dopant profile of the asymmetric transistor.

Abstract: A communication system includes transmit and receive paths, a balancing filter, a noise generator, a detector, and an interface. The transmit path is operable to generate data for communication on a communication network. The receive path is operable to receive data from the communication network. The balancing filter is coupled between the transmit path and the receive path. The noise generator is operable to inject a noise signal on the receive path. The detector is operable to measure reflected power in the transmit path associated with the noise signal. The interface is operable to receive a plurality of sets of coefficients for configuring the balancing filter, wherein the detector is operable to measure the reflected power for each of the sets of coefficients.

Abstract: Metrology data associated with a plurality of workpieces processed at a selected operation in the process flow including a plurality of operations is retrieved. A processing context associated with each of the workpieces is determined. The processing context identifies at least one previous tool used to perform an operation on the associated workpiece prior to the selected operation. A plurality of performance metrics is determined for a plurality of tools capable of performing the selected operation based on the metrology data. Each performance metric is associated with a particular tool and a particular processing context. A set of the performance metrics is identified for the plurality of tools having a processing context matching a processing context of a selected workpiece awaiting performance of the selected operation. The selected workpiece is dispatched for processing in a selected one of the plurality of tools based on the set of performance metrics.

Abstract: A silicon/germanium material and a silicon/carbon material may be provided in transistors of different conductivity type on the basis of an appropriate manufacturing regime without unduly contributing to overall process complexity. Furthermore, appropriate implantation species may be provided through exposed surface areas of the cavities prior to forming the corresponding strained semiconductor alloy, thereby additionally contributing to enhanced overall transistor performance. In other embodiments a silicon/carbon material may be formed in a P-channel transistor and an N-channel transistor, while the corresponding tensile strain component may be overcompensated for by means of a stress memorization technique in the P-channel transistor. Thus, the advantageous effects of the carbon species, such as enhancing overall dopant profile of P-channel transistors, may be combined with an efficient strain component while enhanced overall process uniformity may also be accomplished.