Patents Represented by Attorney, Agent or Law Firm William Prupp
  • Graded semiconductor layers for reducing threshold voltage for a nitride-based laser diode structure
    Patent number: 6618413
    Abstract: Graded semiconductor layers between GaN and AlGaN layers in a nitride based semiconductor laser structure reduce the threshold voltage of the laser structure by reducing the electric potential barrier at the interface between the GaN and AlGaN layers. The graded layers can be step graded, continuous graded or digital graded.
    Type: Grant
    Filed: December 21, 2001
    Date of Patent: September 9, 2003
    Assignee: Xerox Corporation
    Inventors: David P. Bour, Michael A. Kneissl