Patents Represented by Attorney William Stepanishan

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  • Fabrication of an epitaxial layer diode in aluminum nitride on sapphire
    Patent number: 4095331
    Abstract: An ultraviolet light emitting diode array of aluminum nitride grown on a sapphire substrate is fabricated by sputtering a preliminary layer of aluminum nitride onto a sapphire substrate, then placing said coated substrate in contact with a source of aluminum nitride and heating said composite in a particular atmosphere, resulting in the deposition of layers of aluminum nitride onto said coated substrate.
    Type: Grant
    Filed: November 4, 1976
    Date of Patent: June 20, 1978
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventor: Richard Frederick Rutz