Abstract: An improved insulating layer is formed by applying to a suitable substrate an organic solution, prepared by reacting an aminoalkoxysilane monomer, an arylalkoxysilane or arylsilazane monomer and water in a solvent, and then heating the coated substrate under conditions so as to evaporate the solvent and form a layer of cured ladder-type silsesquioxane copolymer. The insulating layer, which demonstrates excellent planarizing and thermal stability characteristics, is particularly useful in semiconductor device applications.
Type:
Grant
Filed:
March 15, 1990
Date of Patent:
August 27, 1991
Assignee:
International Business Machines Corporation
Inventors:
Harold G. Linde, Rosemary A. Previti-Kelly