Abstract: A conductive line for programming a magnetoresistive memory device which includes a metal interconnect region positioned proximate to a magnetoresistive random access memory device, wherein the metal interconnect region supplies a current which produces a magnetic field and wherein the metal interconnect region includes a metal layer with a length and a width and has a first side, a second side, a third side, and a fourth side wherein a ferromagnetic cladding region with a thickness is positioned on the first side, the second side, the third side, and the fourth side of the metal layer, and wherein the ferromagnetic cladding region positioned on the first side has a trench having a length less than the length of the metal layer and a width approximately equal to the thickness of the ferromagnetic of the magnetic cladding region. The length of the trench can be changed to adjust the magnitude of the magnetic field.