Patents Represented by Attorney, Agent or Law Firm Wolf, Greenfield & Sacks, P.
  • MOS technology power device with low output resistance and low capacitance, and related manufacturing process
    Patent number: 6228719
    Abstract: A MOS-gated power device includes a plurality of elementary functional units, each elementary functional unit including a body region of a first conductivity type formed in a semiconductor material layer of a second conductivity type having a first resistivity value. Under each body region a respective lightly doped region of the second conductivity type is provided having a second resistivity value higher than the first resistivity value.
    Type: Grant
    Filed: January 21, 1999
    Date of Patent: May 8, 2001
    Assignee: STMicroelectronics S.r.l.
    Inventors: Ferruccio Frisina, Giuseppe Ferla, Salvatore Rinaudo
  • Bipolar transistor with an inhomogeneous emitter in a BICMOS integrated circuit method
    Patent number: 6180442
    Abstract: The present invention relates to a method for fabricating an integrated circuit including an NPN-type bipolar transistor, including the steps of defining a base-emitter location of the transistor with polysilicon spacers resting on a silicon nitride layer; overetching the silicon nitride under the spacers; filling the overetched layer with highly-doped N-type polysilicon; depositing an N-type doped polysilicon layer; and diffusing the doping contained in the third and fourth layers to form the emitter of the bipolar transistor.
    Type: Grant
    Filed: November 13, 1997
    Date of Patent: January 30, 2001
    Assignee: SGS-Thomson Microelectronics S.A.
    Inventor: Yvon Gris