Abstract: A system and method for achieving partial polymerization of a photoreactive resin include: (i) light source means for providing light energy to the photoreactive resin, the light source means having an intensity; (ii) timing means for causing the light source means to provide light energy to the photoreactive resin for an illumination time, during which the light source means provides light energy to the photoreactive resin, the timing means selectively operable in a plurality of different time increments, thereby allowing fine tuning of the total amount of light energy provided to the photoreactive resin; and (iii) power supply means electrically coupled to the light source means and the timing means for supplying electrical power to the light source means and the timing means. In one embodiment, the system is programmed to automatically achieve a constant total light energy output despite variations in the intensity of the light source means.

Abstract: A surface having an exposed silicon/silica interface is cleaned by ah HF dip, followed immediately by a rinse in citric acid, followed by a rinse in deionized water. Low pH of the citric acid significantly prevents the formation of a charge differential between the silica and silicon portions of the surface, which charge differential would otherwise cause any silica particles present to remain on the silicon portion of the surface. Surfactant properties of the citric acid help remove any silica particles from the surface. The deionized water rinse then removes the citric acid from the surfaces, leaving a very clean, low particulate surface on both the silica and silicon portions thereof, with little or no etching of the silicon portion.