Abstract: A conductive structure in a silicon wafer for preventing plasma damage. The wafer includes a plurality of dies and a plurality of scribe lines between the dies. The semiconductor substrate of this wafer further includes a plurality of patterned conductive layers. The conductive structure comprises of a plurality of ground wires and a plurality of contacts. The ground wires are distributed inside the scribe lines and are positioned at least in the uppermost conductive layer. The contacts are used for connecting the ground wires and the semiconductor substrate electrically. When other conductive layers other than the uppermost conductive layer also contain ground wire connections, the ground wires in different conductive layers are electrically connected by plugs.