Abstract: A microbiocidal composition including a first component comprises a guanidine compound, a second component which comprises either prochloraz, propiconazole or iodocarb, wherein the weight ratio of first component to second component is in the range of from about 32:1 to about 1:16.
The microbiocidal composition provides effective and broader control of micro-organisms in various industrial systems and for household products, agricultural products and biomedical products.
Type:
Grant
Filed:
August 28, 2000
Date of Patent:
January 29, 2002
Inventors:
George William Mason, Peter James Hayward, Wallace J Rae, John Doyle
Abstract: A continuously variable transmission is provided with an adjustable pulley assembly including two sheaves on a pulley shaft, at least one sheave is axially movable with respect to the pulley shaft by a hydraulically operated movement, the movement includes a piston/cylinder assembly for generating a first force acting on the movable sheave and centrifugal pressure compensator for generating a second force acting on the movable sheave in a direction opposite with respect to the first force; the centrifugal pressure compensator includes a further cylinder fixed to the axially movable sheave in radial direction beyond the piston/cylinder assembly, and a further piston fixed to the pulley shaft, the further piston and the further cylinder form a further piston/cylinder assembly.
Type:
Grant
Filed:
April 14, 1999
Date of Patent:
August 28, 2001
Assignee:
Van Doorne's Transmissie B.V.
Inventor:
Johannes Gerardus Ludovicus Maria Van Spijk
Abstract: In a contactless nonvolatile semiconductor memory device including a semiconductor substrate and a plurality of impurity diffusion layers of a rectangular shape serving as sub bit lines on the semiconductor substrate, a plurality of grooves of a rectangular shape are formed in the semiconductor substrate between the impurity diffusion layers. Also, a first gate insulating layer is formed on the semiconductor substrate within the grooves, and a plurality of floating gate electrodes are formed on the first insulating layer. Further, a second gate insulating layer is formed on the floating gate electrodes, and a plurality of word lines are formed on the second gate insulating layer.