Patents Represented by Attorney, Agent or Law Firm Yougn & Thompson
  • Patent number: 6342522
    Abstract: A microbiocidal composition including a first component comprises a guanidine compound, a second component which comprises either prochloraz, propiconazole or iodocarb, wherein the weight ratio of first component to second component is in the range of from about 32:1 to about 1:16. The microbiocidal composition provides effective and broader control of micro-organisms in various industrial systems and for household products, agricultural products and biomedical products.
    Type: Grant
    Filed: August 28, 2000
    Date of Patent: January 29, 2002
    Inventors: George William Mason, Peter James Hayward, Wallace J Rae, John Doyle
  • Patent number: 6280357
    Abstract: A continuously variable transmission is provided with an adjustable pulley assembly including two sheaves on a pulley shaft, at least one sheave is axially movable with respect to the pulley shaft by a hydraulically operated movement, the movement includes a piston/cylinder assembly for generating a first force acting on the movable sheave and centrifugal pressure compensator for generating a second force acting on the movable sheave in a direction opposite with respect to the first force; the centrifugal pressure compensator includes a further cylinder fixed to the axially movable sheave in radial direction beyond the piston/cylinder assembly, and a further piston fixed to the pulley shaft, the further piston and the further cylinder form a further piston/cylinder assembly.
    Type: Grant
    Filed: April 14, 1999
    Date of Patent: August 28, 2001
    Assignee: Van Doorne's Transmissie B.V.
    Inventor: Johannes Gerardus Ludovicus Maria Van Spijk
  • Patent number: 6274432
    Abstract: In a contactless nonvolatile semiconductor memory device including a semiconductor substrate and a plurality of impurity diffusion layers of a rectangular shape serving as sub bit lines on the semiconductor substrate, a plurality of grooves of a rectangular shape are formed in the semiconductor substrate between the impurity diffusion layers. Also, a first gate insulating layer is formed on the semiconductor substrate within the grooves, and a plurality of floating gate electrodes are formed on the first insulating layer. Further, a second gate insulating layer is formed on the floating gate electrodes, and a plurality of word lines are formed on the second gate insulating layer.
    Type: Grant
    Filed: March 27, 2000
    Date of Patent: August 14, 2001
    Assignee: NEC Corporation
    Inventor: Yosiaki Hisamune