Abstract: Methods for depositing an amorphous vanadium oxide (VOx) film include vaporizing vanadium from a vanadium source while the a gas containing an oxygen species and a process modifying additive are in the chamber so as to deposit an amorphous VOx film on the substrate, where x>0. The process modifying additive includes a gas flowing into the chamber or vaporized material from a target source. The additive may stabilize the deposition rate of VOx, reduce resistivity, improve thickness control, and improve uniformity of thickness and resistivity. The thin film may be a nitrogen-enhanced, amorphous vanadium oxide (VOxNy) film formed on a substrate, where x>y>0, and the film contains at least 0.2 atomic % nitrogen. The film may be used in a device, such as a thermal or infrared sensor, or more particularly a bolometer.

Abstract: A system and method for performing sputter etching includes an ion source that generates an ion current that is directed at a substrate and an electron source that generates an electron current directed at the substrate. Biasing circuitry biases the substrate with an a-symmetric bi-polar DC voltage pulse signal. The biasing circuitry is formed from a positive voltage source with respect to ground, a negative voltage source with respect to ground and a high frequency switch. At least one current sensor, coupled to the biasing circuitry, monitors a positive current and a negative current from the substrate during one or more cycles of the a-symmetric bi-polar DC voltage pulse signal. A control system, coupled to the at least one current sensor, varies the ion current independently from the electron current. The ion and electron sources create a continuous plasma that is proximate the substrate and the biasing circuitry causes the substrate to alternatively attract ions and electrons from the plasma.

Abstract: A bench-joining optical component and a first optical component are aligned on a first optical bench, and then rigidly coupled to the first bench, in order to form a first portion of an optical subassembly. Following completion of the first portion, all components in the first portion are pre-aligned and fixed with respect to each other, moving as a unit. A third optical component is aligned and permanently coupled to a second optical bench, in order to form a second portion of the optical sub-assembly. The first and second portions of optical sub-assembly are combined by positioning an exposed side of the bench joining optical component on the second bench, aligning the bench-joining optical component with the third optical component on the second bench, and permanently securing the bench-joining optical component to the second bench.

Abstract: A multi-channel optical device includes a first plurality of optical structures formed simultaneously using vapor deposition on different regions of a common substrate. Each optical structure in the plurality is comprised of a plurality of thin-film layers. The thickness of each layer in a given optical structure corresponds to a wavelength associated with one of the channels. A reflector has a surface parallel to the common substrate, and a transport region is disposed between the first plurality of optical structures and the reflector. An aperture is disposed at one end of the transport region, and the first plurality of optical structures are disposed along a length of the transport region. When an input optical signal is provided to the aperture, the device functions as an optical demultiplexer and output optical signals associated with different ones of the channels are generated at separate positions along a length of the transport region.

Abstract: A system and method for forming a chemically reacted layer proximate an exposed surface of a substrate is disclosed. A gas supply provides a chemically reactive molecular gas to an ion source that generates a divergent ion current directed at a target. The ion current contains at least one species of chemically reactive molecular ion, and the target is disposed in a chamber having a partial vacuum. A voltage source applies a bias to the target such that chemically reactive molecular ions from the ion source are accelerated toward the target with sufficient kinetic energy to dissociate at least some of the chemically reactive molecular ions by collision with the surface of the target.

Abstract: A system and method for manufacturing thin-film structures disposed on a substrate. The thin-film structures have different respective thicknesses that vary along a radius of the substrate. A substrate rotates about an axis of rotation and a source of deposited material is directed at the rotating substrate. A mask having a stepped profile is positioned between the rotating substrate and the source. The stepped mask selectively blocks material emanating from the source from reaching the substrate. Each step of the profile of the mask corresponds to one of the respective thicknesses of the thin-film structures. The radius along which the different respective thicknesses of the film-thin structures vary is measured from the axis of rotation of the rotating substrate, and the substrate includes at least one wafer having a center that is either coincident or offset from the axis of rotation.

Abstract: A system and method for performing sputter deposition includes at least one ion source that generates at least one ion current directed at first and second targets, at least one electron source that generates at least one electron current directed at the first and second targets, and circuitry that biases the first and second targets with independent first and second DC voltage pulse signals. A first current sensor, coupled to the biasing circuitry, monitors a positive current and a negative current from the first target during one or more cycles of the first DC voltage pulse signal, and a second current sensor, coupled to the biasing circuitry, monitors a positive current and a negative current from the second target during one or more cycles of the second DC voltage pulse signal. A controller, coupled to the first and second current sensors, varies the at least one ion current independently from the at least one electron current.

Abstract: A system and method for forming a chemically reacted layer proximate an exposed surface of a substrate. A gas supply provides a chemically reactive molecular gas to an ion source that generates a divergent ion current directed at a target. The ion current contains at least one species of chemically reactive molecular ion, and the target is disposed in a chamber having a partial vacuum. A voltage source applies a bias to the target such that chemically reactive molecular ions from the ion source are accelerated toward the target with sufficient kinetic energy to dissociate at least some of the chemically reactive molecular ions by collision with the surface of the target to form a population of neutral chemically reactive molecular fragments, atoms or radicals at least some of which scatter away from the surface of the target and into the chamber.

Abstract: A system and method for performing sputter deposition includes at least one ion source that generates at least one ion current directed at first and second targets, at least one electron source that generates at least one electron current directed at the first and second targets, and circuitry that biases the first and second targets with independent first and second DC voltage pulse signals. A first current sensor, coupled to the biasing circuitry, monitors a positive current and a negative current from the first target during one or more cycles of the first DC voltage pulse signal, and a second current sensor, coupled to the biasing circuitry, monitors a positive current and a negative current from the second target during one or more cycles of the second DC voltage pulse signal. A controller, coupled to the first and second current sensors, varies the at least one ion current independently from the at least one electron current.

Abstract: A system for performing sputter disposition on a substrate. A divergent ion current source generates a divergent ion beam. The ion current source has a central axis about which ions are directed toward a surface of a negatively biased target. A rotating substrate is positioned proximate to the target. The central axis of the ion current source is normal to the surface of the target and parallel to a deposition surface of the rotating substrate.

Abstract: A system and method for controlling a circumferential deposition thickness distribution on a substrate includes a motor that rotates the substrate and a positioning sensor that senses an angular position of the substrate. At least one deposition thickness sensor senses the deposition thickness of the substrate at multiple positions on a circumference of a circle centered about an axis of rotation of the substrate. At least one controller drives a vapor source used to emit material for a deposition on a substrate. The at least one controller is coupled to the positioning sensor and the deposition thickness sensor. The controller synchronously varies an emission rate of material from the vapor source with respect to the angular position of the substrate to control the circumferential deposition thickness distribution.

Abstract: A system and method for manufacturing thin-film structures disposed on a substrate. The thin-film structures have different respective thicknesses that vary along a radius of the substrate. A substrate rotates about an axis of rotation and a source of deposited material is directed at the rotating substrate. A mask having a stepped profile is positioned between the rotating substrate and the source. The stepped mask selectively blocks material emanating from the source from reaching the substrate. Each step of the profile of the mask corresponds to one of the respective thicknesses of the thin-film structures. The radius along which the different respective thicknesses of the film-thin structures vary is measured from the axis of rotation of the rotating substrate, and the substrate includes at least one wafer having a center that is either coincident or offset from the axis of rotation.

Abstract: A system and method for controlling a deposition thickness distribution over a substrate. A motor rotates the substrate, and at least one sensor senses the deposition thickness of the substrate at two or more radii on the substrate. An actuator varies a shadow of a mask disposed over a target used to sputter material on the substrate. An ion source generates an ion beam that is directed toward the target. The mask is positioned between the ion source and the target, and selectively blocks ion current from the ion source from reaching the target. A process controller is coupled to the deposition thickness sensor and the actuator. In response to the sensed deposition thickness, the process controller varies the shadow of the mask with respect to the target to control the deposition thickness distribution over the substrate.

Abstract: A system for performing sputter disposition on a substrate. A divergent ion current source generates a divergent ion beam. The ion current source has a central axis about which ions are directed toward a surface of a negatively biased target. A rotating substrate is positioned proximate to the target. The central axis of the ion current source is normal to the surface of the target and parallel to a deposition surface of the rotating substrate.

Abstract: A system for performing sputter disposition on a substrate. A divergent ion current source generates a divergent ion beam. The ion current source has a central axis about which ions are directed toward a surface of a negatively biased target. A rotating substrate is positioned proximate to the target. The central axis of the ion current source is normal to the surface of the target and parallel to a deposition surface of the rotating substrate.

Abstract: A system and method for manufacturing thin-film structures disposed on a substrate. The thin-film structures have different respective thicknesses that vary along a radius of the substrate. A substrate rotates about an axis of rotation and a source of deposited material is directed at the rotating substrate. A mask having a stepped profile is positioned between the rotating substrate and the source. The stepped mask selectively blocks material emanating from the source from reaching the substrate. Each step of the profile of the mask corresponds to one of the respective thicknesses of the thin-film structures. The radius along which the different respective thicknesses of the film-thin structures vary is measured from the axis of rotation of the rotating substrate.

Abstract: A system and method for simultaneously performing sputter deposition on a plurality of planar substrates. An ion current source generates an ion beam in which ions are directed toward a target. The target is formed from a section of a sphere. Each of the plurality of planar substrates has a deposition surface that is tangent to a surface of the sphere. In addition, a substrate that is a section of a sphere may be used. The deposition thickness across the spherically-shaped substrate is uniform.

Abstract: A system and method for controlling a deposition thickness distribution on a substrate includes a motor that rotates the substrate and at least one deposition thickness sensor that senses the deposition thickness on the rotating substrate at two or more radii. At least one actuator varies a shadow of a mask that is disposed over the rotating substrate, wherein the shadow has a surface area that is less than an unmasked surface area of the rotating substrate. A vapor source deposits material on the rotating substrate. A process controller is coupled to the thickness deposition sensor and the at least one actuator. In response to an output of the deposition thickness sensor, the process controller varies the shadow of the mask along a radius of the substrate to control the deposition thickness distribution.

Abstract: A system and method for performing sputter deposition on a substrate. First, second, and third divergent ion current sources generate first, second and third divergent ion beams, respectively. The substrate faces the first ion current source. The first target faces the second ion current source, and the second target faces the third ion current source. The central axis of each ion current source is orthogonal to the central axes of the other two ion current sources.

Abstract: A system and method for performing sputter deposition on a substrate include ion and electron sources that generate ion and electron currents directed at a target. Biasing circuitry biases the target with an a-symmetric bi-polar DC voltage pulse signal. The biasing circuitry is formed from positive and negative voltage sources and a high frequency switch. A current sensor, coupled to the biasing circuitry, monitors positive and negative currents from the target. A control system, coupled to the current sensor, varies the ion and electron currents independently. The ion and electron sources create a continuos plasma that is proximate the target. Ions attracted from the plasma sputter the target, and material from the target is deposited on the substrate. Electrons attracted from the plasma neutralize accumulated charge on the target.