Abstract: A system and method for performing sputter etching includes an ion source that generates an ion current that is directed at a substrate and an electron source that generates an electron current directed at the substrate. Biasing circuitry biases the substrate with an a-symmetric bi-polar DC voltage pulse signal. The biasing circuitry is formed from a positive voltage source with respect to ground, a negative voltage source with respect to ground and a high frequency switch. At least one current sensor, coupled to the biasing circuitry, monitors a positive current and a negative current from the substrate during one or more cycles of the a-symmetric bi-polar DC voltage pulse signal. A control system, coupled to the at least one current sensor, varies the ion current independently from the electron current. The ion and electron sources create a continuous plasma that is proximate the substrate and the biasing circuitry causes the substrate to alternatively attract ions and electrons from the plasma.

Abstract: A bench-joining optical component and a first optical component are aligned on a first optical bench, and then rigidly coupled to the first bench, in order to form a first portion of an optical subassembly. Following completion of the first portion, all components in the first portion are pre-aligned and fixed with respect to each other, moving as a unit. A third optical component is aligned and permanently coupled to a second optical bench, in order to form a second portion of the optical sub-assembly. The first and second portions of optical sub-assembly are combined by positioning an exposed side of the bench joining optical component on the second bench, aligning the bench-joining optical component with the third optical component on the second bench, and permanently securing the bench-joining optical component to the second bench.

Abstract: A multi-channel optical device includes a first plurality of optical structures formed simultaneously using vapor deposition on different regions of a common substrate. Each optical structure in the plurality is comprised of a plurality of thin-film layers. The thickness of each layer in a given optical structure corresponds to a wavelength associated with one of the channels. A reflector has a surface parallel to the common substrate, and a transport region is disposed between the first plurality of optical structures and the reflector. An aperture is disposed at one end of the transport region, and the first plurality of optical structures are disposed along a length of the transport region. When an input optical signal is provided to the aperture, the device functions as an optical demultiplexer and output optical signals associated with different ones of the channels are generated at separate positions along a length of the transport region.

Abstract: A system and method for manufacturing thin-film structures disposed on a substrate. The thin-film structures have different respective thicknesses that vary along a radius of the substrate. A substrate rotates about an axis of rotation and a source of deposited material is directed at the rotating substrate. A mask having a stepped profile is positioned between the rotating substrate and the source. The stepped mask selectively blocks material emanating from the source from reaching the substrate. Each step of the profile of the mask corresponds to one of the respective thicknesses of the thin-film structures. The radius along which the different respective thicknesses of the film-thin structures vary is measured from the axis of rotation of the rotating substrate, and the substrate includes at least one wafer having a center that is either coincident or offset from the axis of rotation.

Abstract: A system for performing sputter disposition on a substrate. A divergent ion current source generates a divergent ion beam. The ion current source has a central axis about which ions are directed toward a surface of a negatively biased target. A rotating substrate is positioned proximate to the target. The central axis of the ion current source is normal to the surface of the target and parallel to a deposition surface of the rotating substrate.

Abstract: A system and method for simultaneously performing sputter deposition on a plurality of planar substrates. An ion current source generates an ion beam in which ions are directed toward a target. The target is formed from a section of a sphere. Each of the plurality of planar substrates has a deposition surface that is tangent to a surface of the sphere. In addition, a substrate that is a section of a sphere may be used. The deposition thickness across the spherically-shaped substrate is uniform.

Abstract: A system and method for performing sputter deposition on a substrate include ion and electron sources that generate ion and electron currents directed at a target. Biasing circuitry biases the target with an a-symmetric bi-polar DC voltage pulse signal. The biasing circuitry is formed from positive and negative voltage sources and a high frequency switch. A current sensor, coupled to the biasing circuitry, monitors positive and negative currents from the target. A control system, coupled to the current sensor, varies the ion and electron currents independently. The ion and electron sources create a continuos plasma that is proximate the target. Ions attracted from the plasma sputter the target, and material from the target is deposited on the substrate. Electrons attracted from the plasma neutralize accumulated charge on the target.

Abstract: A system and method for performing sputter deposition on a substrate. First, second, and third divergent ion current sources generate first, second and third divergent ion beams, respectively. The substrate faces the first ion current source. The first target faces the second ion current source, and the second target faces the third ion current source. The central axis of each ion current source is orthogonal to the central axes of the other two ion current sources.