Patents Assigned to 501 Sharp Kabushiki Kaisha
  • Patent number: 4859060
    Abstract: A variable interferometric device comprising a Fabry-Perot interferometer composed of a pair of reflecting substances facing each other with a space therebetween formed by spacers and a means for deforming at least one of the reflecting substances constituting said Fabry-Perot interferometer to thereby change the interferometric characteristics of said Fabry-Perot interferometer.
    Type: Grant
    Filed: November 25, 1986
    Date of Patent: August 22, 1989
    Assignee: 501 Sharp Kabushiki Kaisha
    Inventors: Masayuki Katagiri, Masanori Watanabe, Kazutaka Uda, Masaya Hijikigawa, Shuhei Tsuchimoto, Yasuhiko Inami
  • Patent number: 4857907
    Abstract: A liquid-crystal display device comprising thin-film transistors arrayed in a matrix, wherein each of said thin-film transistors comprises an insulating substrate, a gate electrode disposed on said insulating substrate, a first insulating film covering said gate electrode, an a-Si semiconductor film disposed on said first insulating film, a second insulating film disposed on said a-Si semiconductor film, a p-doped n+-amorphous Si film forming both a source and a drain on said a-Si semiconductor film and said second insulating film, a third insulating film covering said p-doped n+-amorphous Si film, except for a part of said p-doped n+-amorphous Si film, and said a-Si semiconductor film, a source electrode and a drain electrode forming junctions with said part of the p-doped n+-amorphous Si film and covering said third insulating film, and a picture-element electrode, a part of which is superposed on said drain electrode.
    Type: Grant
    Filed: April 28, 1987
    Date of Patent: August 15, 1989
    Assignee: 501 Sharp Kabushiki Kaisha
    Inventor: Mitsuhiro Koden
  • Patent number: 4853936
    Abstract: An index guided semiconductor laser device comprising a striped optical waveguide in the active layer, at least a part of the wavegide having continuous indentations at the interface between the waveguide and the outside of the waveguide, whereby only laser light of a high-order transverse mode is radiated from the waveguide to the outside of the waveguide and only laser light of the fundamental transverse mode is propagated within the waveguide.
    Type: Grant
    Filed: April 13, 1988
    Date of Patent: August 1, 1989
    Assignee: 501 Sharp Kabushiki Kaisha
    Inventors: Sadayoshi Matsui, Shinji Kaneiwa, Taiji Morimoto, Masahiro Yamaguchi, Mototaka Taneya, Mitsuhiro Matsumoto
  • Patent number: 4852111
    Abstract: A semiconductor laser device comprising a substrate of a first conductivity type having a mesa; a first semiconductor layer of a second conductivity type which is formed on the upper surface of the substrate other than the mesa to form a flat plane including the top face of the mesa; a laser oscillation region which is formed on the flat plane and includes an active area for laser oscillation; and a multi-layer structure burying the laser oscillation region, the multi-layer structure comprising a high resistance layer formed on the first semiconductor layer and burying both sides of the laser oscillation region, and a second semiconductor layer of the first conductivity type formed on the high resistance layer.
    Type: Grant
    Filed: December 15, 1987
    Date of Patent: July 25, 1989
    Assignee: 501 Sharp Kabushiki Kaisha
    Inventors: Toshiro Hayakawa, Takahiro Suyama, Kosei Takahashi, Masafumi Kondo
  • Patent number: 4845724
    Abstract: A semiconductor laser device comprising a double-heterostructure that is composed of an active layer and a pair of cladding layers sandwiching the active layer therebetween, a striped structure in which current injected into the laser device is confined, the striped structure being constituted by a part of the double-heterostructure, and optical guiding layers positioned between one cladding layer and the active layer and between the active layer and the other cladding layer, wherein the resistance of one optical guiding layer positioned at the striped structure side is higher than that of the other optical guiding layer positioned opposite to the striped structure side.
    Type: Grant
    Filed: December 22, 1987
    Date of Patent: July 4, 1989
    Assignee: 501 Sharp Kabushiki Kaisha
    Inventors: Toshiro Hayakawa, Takahiro Suyama, Kosei Takahashi, Masafumi Kondo
  • Patent number: 4823353
    Abstract: A semiconductor laser array apparatus comprising a semiconductor laser array device having a plurality of active waveguides in a parallel manner with an optical phase-coupling between the adjacent waveguides and an optical phase-shifting means attaining a 180.degree. phase-shift between the adjacent laser beams emitted from the adjacent waveguides of the laser array device, the phase-shifting means being disposed in the vicinity of one of the facets of the laser array device.
    Type: Grant
    Filed: October 8, 1987
    Date of Patent: April 18, 1989
    Assignee: 501 Sharp Kabushiki Kaisha
    Inventors: Mototaka Taneya, Mitsuhiro Matsumoto, Sadayoshi Matsui
  • Patent number: 4817109
    Abstract: An external resonator type semiconductor laser apparatus comprising a semiconductor laser device, a reflector positioned behind said laser device in a manner to face the light-emitting rear facet of said laser device, and a photodetector, for detecting the optical output of said laser device, positioned backward of said reflector, wherein a part of the laser light from said light-emitting rear facet is reflected by said reflector and the reflected light is then incident to said photodetector.
    Type: Grant
    Filed: December 4, 1986
    Date of Patent: March 28, 1989
    Assignee: 501 Sharp Kabushiki Kaisha
    Inventors: Nobuybuki Miyauchi, Osamu Yamamoto, Hiroshi Hayashi, Saburo Yamamoto, Shigeki Maei
  • Patent number: 4813051
    Abstract: A semiconductor laser array device comprising an active waveguide extending from one light-emitting facet to the other light-emitting facet, wherein said active waveguide is composed of a single main portion extending in the oscillation direction from said one light-emitting facet and constituting a loss waveguide, and a plurality of parallel branching portions extending from the end of said main portion to said other light-emitting facet and constituting a real index waveguide.
    Type: Grant
    Filed: January 20, 1987
    Date of Patent: March 14, 1989
    Assignee: 501 Sharp Kabushiki Kaisha
    Inventors: Mototaka Taneya, Mitsuhiro Matsumoto, Hidenori Kawanishi, Sadayoshi Matsui
  • Patent number: 4807235
    Abstract: A semiconductor laser device comprising a multi-layered semiconductor crystal containing an active region for laser oscillation, wherein the extended portions of said active region which are adjacent to both sides of one facet having the width of a selected value of said device constitute light-absorbing regions by which light in a high-order transverse mode is absorbed to a greater extent than that in a fundamental transverse mode, thereby achieving laser oscillation in a stable fundamental transverse mode up to a high output power.
    Type: Grant
    Filed: September 9, 1986
    Date of Patent: February 21, 1989
    Assignee: 501 Sharp Kabushiki Kaisha
    Inventors: Takahiro Suyama, Kohsei Takahashi, Saburo Yamamoto, Toshiro Hayakawa, Masafumi Kondo
  • Patent number: 4412305
    Abstract: An electronic translator is provided in which any of a plurality of groups of words, such as sentences, idioms and phrases can be translated from a first language into a second language in response to the input of a single word from one or more of the groups of words in the first language. An additional word can be entered in some embodiments so as to function in the same manner as the single word. At least two types of memories are provided for storing data representing each of the groups of words and their translated equivalents respectively. A detection circuit is provided for detecting whether the single word is equivalent to a word in any of the groups of words retrieved from one of the memories. An address circuit is provided for addressing each of the two memories so as to cause retrieval of the groups of words and their equivalent translated words.
    Type: Grant
    Filed: November 7, 1980
    Date of Patent: October 25, 1983
    Assignee: 501 Sharp Kabushiki Kaisha
    Inventor: Kunio Yoshida