Abstract: A variable interferometric device comprising a Fabry-Perot interferometer composed of a pair of reflecting substances facing each other with a space therebetween formed by spacers and a means for deforming at least one of the reflecting substances constituting said Fabry-Perot interferometer to thereby change the interferometric characteristics of said Fabry-Perot interferometer.
Abstract: A liquid-crystal display device comprising thin-film transistors arrayed in a matrix, wherein each of said thin-film transistors comprises an insulating substrate, a gate electrode disposed on said insulating substrate, a first insulating film covering said gate electrode, an a-Si semiconductor film disposed on said first insulating film, a second insulating film disposed on said a-Si semiconductor film, a p-doped n+-amorphous Si film forming both a source and a drain on said a-Si semiconductor film and said second insulating film, a third insulating film covering said p-doped n+-amorphous Si film, except for a part of said p-doped n+-amorphous Si film, and said a-Si semiconductor film, a source electrode and a drain electrode forming junctions with said part of the p-doped n+-amorphous Si film and covering said third insulating film, and a picture-element electrode, a part of which is superposed on said drain electrode.
Abstract: An index guided semiconductor laser device comprising a striped optical waveguide in the active layer, at least a part of the wavegide having continuous indentations at the interface between the waveguide and the outside of the waveguide, whereby only laser light of a high-order transverse mode is radiated from the waveguide to the outside of the waveguide and only laser light of the fundamental transverse mode is propagated within the waveguide.
Abstract: A semiconductor laser device comprising a substrate of a first conductivity type having a mesa; a first semiconductor layer of a second conductivity type which is formed on the upper surface of the substrate other than the mesa to form a flat plane including the top face of the mesa; a laser oscillation region which is formed on the flat plane and includes an active area for laser oscillation; and a multi-layer structure burying the laser oscillation region, the multi-layer structure comprising a high resistance layer formed on the first semiconductor layer and burying both sides of the laser oscillation region, and a second semiconductor layer of the first conductivity type formed on the high resistance layer.
Abstract: A semiconductor laser device comprising a double-heterostructure that is composed of an active layer and a pair of cladding layers sandwiching the active layer therebetween, a striped structure in which current injected into the laser device is confined, the striped structure being constituted by a part of the double-heterostructure, and optical guiding layers positioned between one cladding layer and the active layer and between the active layer and the other cladding layer, wherein the resistance of one optical guiding layer positioned at the striped structure side is higher than that of the other optical guiding layer positioned opposite to the striped structure side.
Abstract: A semiconductor laser array apparatus comprising a semiconductor laser array device having a plurality of active waveguides in a parallel manner with an optical phase-coupling between the adjacent waveguides and an optical phase-shifting means attaining a 180.degree. phase-shift between the adjacent laser beams emitted from the adjacent waveguides of the laser array device, the phase-shifting means being disposed in the vicinity of one of the facets of the laser array device.
Abstract: An external resonator type semiconductor laser apparatus comprising a semiconductor laser device, a reflector positioned behind said laser device in a manner to face the light-emitting rear facet of said laser device, and a photodetector, for detecting the optical output of said laser device, positioned backward of said reflector, wherein a part of the laser light from said light-emitting rear facet is reflected by said reflector and the reflected light is then incident to said photodetector.
Abstract: A semiconductor laser array device comprising an active waveguide extending from one light-emitting facet to the other light-emitting facet, wherein said active waveguide is composed of a single main portion extending in the oscillation direction from said one light-emitting facet and constituting a loss waveguide, and a plurality of parallel branching portions extending from the end of said main portion to said other light-emitting facet and constituting a real index waveguide.
Abstract: A semiconductor laser device comprising a multi-layered semiconductor crystal containing an active region for laser oscillation, wherein the extended portions of said active region which are adjacent to both sides of one facet having the width of a selected value of said device constitute light-absorbing regions by which light in a high-order transverse mode is absorbed to a greater extent than that in a fundamental transverse mode, thereby achieving laser oscillation in a stable fundamental transverse mode up to a high output power.
Abstract: An electronic translator is provided in which any of a plurality of groups of words, such as sentences, idioms and phrases can be translated from a first language into a second language in response to the input of a single word from one or more of the groups of words in the first language. An additional word can be entered in some embodiments so as to function in the same manner as the single word. At least two types of memories are provided for storing data representing each of the groups of words and their translated equivalents respectively. A detection circuit is provided for detecting whether the single word is equivalent to a word in any of the groups of words retrieved from one of the memories. An address circuit is provided for addressing each of the two memories so as to cause retrieval of the groups of words and their equivalent translated words.