Abstract: Disclosed are a height measurer and a weight measurement device. The disclosed height measurer comprises: a bottom plate; a standing frame which is connected to the bottom plate and supported thereby, and has a rail on the rear surface portion thereof; a moving part that moves up and down along the rail; a tact switch disposed on at least a portion of the moving part; and a head plate which surrounds the standing frame, moves up and down along with the moving part, is hinge-coupled to the moving part, and applies a pressing force to the tact switch while being lifted up upon coming into contact with the head of a user during height measurement.

Abstract: A method of manufacturing a semiconductor package includes forming an insulating layer; forming a seed layer on the insulating layer; forming a photoresist layer on the seed layer; forming a plurality of line pattern holes by patterning the photoresist layer, a horizontal length of a middle portion of each of the plurality of line pattern holes being less than a horizontal length of an upper portion of each of the plurality of line pattern holes and a horizontal length of a lower portion of each of the plurality of line pattern holes; and forming a redistribution line pattern by performing a plating process using a portion of the seed layer exposed by the plurality of line pattern holes.

Abstract: A single pulse spectral statistical analysis method for particle size distribution of inclusions on a surface of a metal material is provided.

Abstract: Embodiments of the present disclosure relate to a light-emitting device package and an electronic device. In an embodiment, a light-emitting device package is provided that includes a lead frame, at least two light-emitting devices mounted on the lead frame and configured to emit different wavelengths of a same color of light, and a phosphor configured to emit light having a color different from the color of light emitted from the at least two light-emitting devices. The embodiments of the present disclosure also relate to an electronic device including the light-emitting device package as a light source. According to the embodiments of the present disclosure, various expressible color spaces can be selectively expressed.

Abstract: A method of detecting defects on a semiconductor wafer includes directing diffuse light to the semiconductor wafer and reflecting the diffuse light off of the semiconductor wafer. The method further includes detecting the diffuse light with a camera to generate an image of the semiconductor wafer and analyzing the image to detect defects on the semiconductor wafer.

Abstract: A display panel including a circuit board having pads, light emitting devices electrically connected to the pads and arranged on the circuit board, each light emitting device having a first surface facing the circuit board and a second surface opposite to the first surface, a buffer material layer disposed between the circuit board and the light emitting devices to fill a space between the circuit board and the light emitting devices, and a cover layer covering the second surface of the light emitting devices, in which the buffer material layer is disposed under the first surfaces of the light emitting devices and has grooves in a region between adjacent light emitting devices, a portion of a top surface of the buffer material layer is disposed between adjacent light emitting devices, and the cover layer fills the grooves of the buffer material layer.

Abstract: A method, a system and a device for determining interlaminar shear strength of a composite laminated plate are provided. The method includes following steps: constructing a force-displacement curve of a composite laminated plate specimen based on strain data, corresponding to different displacements of the indenter, of the composite laminated plate specimen; determining a dominant strain based on plane strain nephograms; reading any defect in the plane strain nephogram corresponding to one displacement as a current defect, and determining a test force acting on the whole composite laminated plate specimen corresponding to the reference displacement of the indenter as a critical strain value; determining a product of the critical strain value and shear modulus under the dominant strain as the shear strength between adjacent single layers to be tested.

Abstract: Self-aligned gate cutting techniques are disclosed herein that provide dielectric gate isolation fins for isolating gates of multigate devices from one another. An exemplary device includes a first multigate device having first source/drain features and a first metal gate that surrounds a first channel layer and a second multigate device having second source/drain features and a second metal gate that surrounds a second channel layer. A dielectric gate isolation fin separates the first metal gate from the second metal gate. The dielectric gate isolation fin includes a first dielectric layer having a first dielectric constant and a second dielectric layer having a second dielectric constant disposed over the first dielectric layer. The second dielectric constant is greater than the first dielectric constant. The first metal gate and the second metal gate physically contact the first channel layer and the second channel layer, respectively, and the dielectric gate isolation fin.

Abstract: An apparatus includes a first flow channel connected to a gas release channel of a gas chromatograph that sends at least a volatile component separated by the gas chromatograph into the mouth of an evaluator; a container that stores a non-gaseous flowable specimen having fluidity; and a second flow channel that sends the flowable specimen into the mouth.

Abstract: A semiconductor device includes first, second, and third power rails extending in a first direction on a substrate and sequentially spaced apart in a second direction intersecting the first direction. A fourth power rail extends in the first direction on the substrate between the first and third power rails. A first well of a first conductive type is displaced inside the substrate between the first and third power rails. Cells are continuously displaced between the first and third power rails and share the first well. The first and third power rails are provided with a first voltage, the second power rail is provided with a second voltage different from the first voltage, the fourth power rail is provided with a third voltage different from the first voltage and the second voltage, and the cells are provided with the third voltage from the fourth power rail.

Abstract: An ultra-high-speed fully automatic precision spectral analysis system for rare earth metals and its working method is disclosed. The system includes a central control server, a precision numerical control rotary table communicatively connected with the central control server, a sample loading-clamping device, an automatic weighing device, an automatic ranging device, an analyzing surface machining device, a rare-earth spark emission spectrometer, and an automatic marking device; the sample loading-clamping device is arranged to fix a test sample of a rare earth metal, the automatic weighing device is arranged to weigh the test sample in real time, and the automatic ranging device, the analyzing surface machining device, the rare-earth spark emission spectrometer, and the automatic marking device are set up around the precision numerical control rotary table to perform the corresponding work processes respectively.

Abstract: It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.

Abstract: There is provided an automated analysis device capable of transferring instruments to be used for an analysis process to a predetermined processing position efficiently and rapidly. In an automated analysis device of the invention, a transfer unit forming a transfer mechanism to transfer instruments to be used for analyte processing into an analyte processing space includes a holding portion to hold the instruments. The holding portion includes a first fitting attachment portion to be attachable to a first instrument in a fitted state, and a second fitting attachment portion to be attachable to a second instrument in a fitted state.

Abstract: An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.

Abstract: Proposed is a probe card. The probe card according to the present disclosure includes: a circuit board; a probe head having a guide plate, and through which a plurality of probes pass; and a connection member electrically connecting the circuit board and the probes to each other, wherein an insulating part of the connection member and the guide plate are made of an anodic aluminum oxide film formed by anodizing a metal as a base material.

Abstract: A display device includes a data line transmitting a data voltage to each pixel, a power line supplying current to each pixel, wherein the data line and the power line are disposed on a substrate and extended along a first direction, a light shielding layer shielding a light emitting diode from light coming from outside, a gate line transmitting a gate voltage to each pixel and extended along a second direction intersecting the first direction, a gate insulating layer and a buffer layer disposed between the data line and the gate line, wherein the data line and the power line are disposed on a same layer as the light shielding layer.

Abstract: The present invention relates to a method for realizing the measuring slip of membrane probe, wherein: an elastomer layer is placed between the rigid acting surface of the membrane probe head and the membrane on which the probe is arranged; on the axial plane of the probe, the elastomer layer takes any axial line passing through the probe as a boundary line, and there is a difference between the thickness of one side and thickness of the other side, so that the probe can deflect during the test, resulting in the measuring slip to penetrate or push away the surface oxide of the tested chip and achieve more stable contact.

Abstract: An image sensor includes a substrate including a first region and a second region surrounding the first region, a light sensing element in the substrate, a planarization layer on the light sensing element, a color filter array layer including color filters on the planarization layer on the first region of the substrate, a light blocking metal pattern on the planarization layer on the second region of the substrate, a dummy color filter layer on the light blocking metal pattern on a portion of the second region adjacent to the first region of the substrate, and microlens on the color filter array layer. Active pixels are in the first region, and optical black (OB) pixels are in the second region.

Abstract: The present disclosure provides an oscilloscope post processing system for an oscilloscope, the oscilloscope post processing system comprising an acquisition memory that stores samples that represent at least one signal acquired by the oscilloscope, and an interval selector that is coupled to the acquisition memory and reads at least some of the stored samples from the memory and outputs at least one first set of the stored samples and at least one second set of the stored samples. Further, the present disclosure provides a respective method, and a respective measurement device.

Abstract: An image sensor is provided and may include a semiconductor substrate having a surface and including trench, the trench extending from the surface into the semiconductor substrate, an insulating pattern provided in the trench; and a doped region in the semiconductor substrate and on the insulating patterns. The doped region includes a side portion on a side surface of the insulating pattern, and a bottom portion on a bottom surface of the insulating pattern. A thickness of the side portion of the doped region is from 85% to 115% of a thickness of the bottom portion of the doped region, and a number of dopants per unit area in the side portion of the doped region is from 85% to 115% of a number of dopants per unit area in the bottom portion.