Patents Assigned to A.E. TECH CORPORATION
  • Publication number: 20130276697
    Abstract: It is to suppress abnormal growth of GaN crystals around edge ends of a seed substrate. A susceptor is provided that has a pocket section in which a seed substrate is fixed, and a sub-susceptor provided between the susceptor and the seed substrate, the sub-susceptor being not reactive with the seed substrate, with a gap provided between the seed substrate and the sub-susceptor.
    Type: Application
    Filed: January 7, 2011
    Publication date: October 24, 2013
    Applicant: A.E. TECH CORPORATION
    Inventor: Hideki Goto