Abstract: A cooled window assembly for a thermal processing chamber, wherein an object in the chamber is heated by a radiation source outside the chamber emitting radiation that includes infrared radiation. The assembly includes upper and lower transparent plates defining passages therebetween. A cooling fluid flows through the passages, which fluid is substantially transparent to the infrared radiation, such that the infrared radiation from the source passes through the plates and through the fluid in the passages to heat the object. The upper plate is substantially thicker than the lower plate, thus providing the window with mechanical strength sufficient withstand atmospheric pressure when the chamber is evacuated.

Abstract: Systems and methods are described for semiconductor wafer pretreatment. A method of treating a semiconductor wafer, includes contacting the semiconductor wafer with a mixture including HF and CH3OH; and then contacting the semiconductor wafer with Cl2 and simultaneously exposing said semiconductor wafer to a source of ultraviolet energy. The selective HSG temperature of formation window is widened. In addition, robustness with regard to changes in the reactor ambient and substrate condition, and selectivity with regard to underlying dielectric layers, are both improved.

Abstract: Systems and methods are described for semiconductor wafer pretreatment. A method of increasing the selectivity of silicon deposition with regard to an underlying oxide layer during deposition of a silicon containing material by broadening a selective temperature of formation window for said silicon containing material by decreasing a lower temperature endpoint includes: providing a semiconductor wafer with the underlying oxide layer in a processing chamber; then pumping water from then processing chamber; and then depositing the silicon containing material on the semiconductor wafer. A step of seeding the semiconductor wafer can be conducted by exposing the semiconducotor wafer to a germanium containing gas. A chlorine containing precursor and/or hydrogen can be introduced into the processing chamber to increase the selectivity of the silicon containing material to the underlying oxide. The selective HSG temperature of formation window is widened.