Abstract: Provided are a method for producing sodium tungstate by supplying an oxidant made of sodium nitrate or sodium nitrite to bring a tungsten containing material and the oxidant into contact with each other in an atmosphere containing oxygen to thereby continuously produce a reaction product; a method for collecting tungsten using the method; and an apparatus for producing sodium tungstate. Also provided are a method for producing a sodium tungstate aqueous solution in which a reductant is introduced into a melt containing the above-described reaction product which is then dissolved in water; and a method for collecting tungsten using the method.

Abstract: Provided is an industrially advantageous molybdenum material which is capable of causing secondary recrystallization to occur at a temperature lower than conventional and which, after the secondary recrystallization, can have a structure that comprises giant crystal grains with less grain boundaries and thus is excellent in creep resistance. The molybdenum material has, in at least a part thereof, a portion having a region where the peak intensities of the (110) and (220) diffraction planes are each less than the peak intensity of the (211) diffraction plane, as measured by X-ray diffraction, in a region at a depth of one-fifth of the entire thickness in a plate thickness direction from a surface.

Abstract: A composite member has a substrate made of a composite material having SiC combined with magnesium or a magnesium alloy, and has a warpage degree of not less than 0.01×10?3 and not more than 10×10?3, the warpage degree being defined as lmax/Dmax, where lmax being a difference between a maximum value and a minimum value of surface displacement of one surface of composite member measured along a longest side thereof, and Dmax being a length of the longest side. Thereby, a composite member capable of efficiently dissipating heat to an installation object, a heat-dissipating member using the composite member, and a semiconductor device having the heat-dissipating member are provided.

Abstract: A semiconductor element mounting member is arranged to infiltrate a matrix metal into a porous body that is formed by sintering diamond particles being in direct contact with each other and that has an infiltration auxiliary layer selectively formed only on the exposed surface of each diamond particle. A production method includes a step at which a mixture of diamond particles, a powder of a chemical element out of which the infiltration auxiliary layer is made, and an ammonium chloride powder is compressed and molded, is then heated to 900° C. or more, and is formed into the porous body. A semiconductor device has a semiconductor element mounted on an element mounting surface of the semiconductor element mounting member with a connecting layer therebetween.

Abstract: A magnesium-based composite member is provided with a through hole through which a fastening member for attachment to a fixing target is to be inserted. A substrate is provided with a substrate hole through which the fastening member is to be inserted, and made of a composite material which is a composite of SiC and a matrix metal which is any of magnesium and a magnesium alloy. A receiving portion is attached to the substrate and made of a metal material different from the matrix metal. The receiving portion is provided with a receiving portion hole through which the fastening member is to be inserted, and at least a part of an inner circumferential surface of the through hole is formed from an inner circumferential surface of the receiving portion hole.

Abstract: A method for producing an ammonium tungstate aqueous solution includes the steps of: adding sulfuric acid to a solution containing tungstate ions; bringing the solution having the sulfuric acid added therein, into contact with an anion exchange resin; and bringing the anion exchange resin into contact with an aqueous solution containing ammonium ions.

Abstract: There is provided a metal laminated structure in which a first metal layer containing tungsten is provided on a first surface of a second metal layer containing copper and a third metal layer containing tungsten is provided on a second surface of the second metal layer opposite to the first surface, and the first metal layer contains crystal grains of tungsten in a form of a columnar crystal extending in a direction perpendicular to the first surface of the second metal layer and the third metal layer contains crystal grains of tungsten in a form of a columnar crystal extending in a direction perpendicular to the second surface of the second metal layer, and a method for producing the metal laminated structure.

Abstract: There are provided a cemented carbide high in thermal diffusivity and excellent in wear resistance, and a cutting tool including a base material formed of this cemented carbide. The cemented carbide is a WC based cemented carbide in which a hard phase mainly constituted of WC grains is bound by a binder phase mainly constituted of Co, and is used for a cutting tool. The binder phase is substantially constituted of Co, or Co and Ni. A total content of Co and Ni is not less than 4.5 mass % and not more than 15 mass %. In this cemented carbide, the WC grains have an average diameter of not less than 0.4 ?m and not more than 4 ?m.

Abstract: The invention provides a semiconductor element mounting substrate that, by virtue of an improvement in thermal conduction efficiency between the substrate and another member, can reliably prevent, for example, a light emitting element such as a semiconductor laser from causing a defective operation by heat generation of itself, by taking full advantage of high thermal conductivity of a diamond composite material.

Abstract: There is provided a metal laminated structure comprising a first metal layer, a second metal layer and a third metal layer, the first metal layer being disposed on one surface of the second metal layer, the third metal layer being disposed on the other surface of the second metal layer, the first metal layer including at least one of tungsten and molybdenum, the second metal layer including copper, the third metal layer including at least one of tungsten and molybdenum, and a method for producing the metal laminated structure.

Abstract: A heat sink substrate has a composite structure including a three-dimensional network structure of SiC ceramic having pores infiltrated with Si, and has a thermal conductivity of not less than 150 W/m·K and an oxygen content of not greater than 7 ppm. The heat sink substrate is easily allowed to have an increased surface area. Further, the heat sink substrate has a higher thermal conductivity and a coefficient thermal expansion close to that of the SiC. Therefore, the heat sink substrate is superior in the efficiency of heat conduction from a semiconductor device. The heat sink substrate is produced by infiltrating a thermally melted Si into the pores of the three-dimensional network structure in a non-oxidative atmosphere in the presence of an oxygen absorber.

Abstract: Provided are a method for producing sodium tungstate by supplying an oxidant made of sodium nitrate or sodium nitrite to bring a tungsten containing material and the oxidant into contact with each other in an atmosphere containing oxygen to thereby continuously produce a reaction product; a method for collecting tungsten using the method; and an apparatus for producing sodium tungstate. Also provided are a method for producing a sodium tungstate aqueous solution in which a reductant is introduced into a melt containing the above-described reaction product which is then dissolved in water; and a method for collecting tungsten using the method.

Abstract: Provided is a tungsten electrode material that can improve the life of an electrode than conventional by the use of a material in place of thorium oxide. The tungsten electrode material includes a tungsten base alloy and oxide particles dispersed in the tungsten base alloy, wherein the oxide particle is an oxide solid solution in which a Zr oxide and/or a Hf oxide and an oxide of at least one or more kinds of rare earth elements selected from Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu are solid-dissolved.

Abstract: Provided are an ancillary material, used for shape processing, which is capable of shortening a processing time, avoiding a reduction in quality of a shape provided to a workpiece material, and allowing a relatively low manufacturing cost; a processing method using the ancillary material; and a method of manufacturing the ancillary material. The tungsten alloy grains (1) comprise: tungsten of greater than or equal to 80% by mass and less than or equal to 98% by mass; nickel; at least one kind of metal selected from the group consisting of iron, copper, and cobalt; and an inevitable impurity, a maximum diameter thereof is greater than or equal to 0.1 mm and less than or equal to 5.00 mm, and a specific surface area thereof is less than or equal to 0.02 m2/g. The tungsten alloy grains (1, 10), the workpiece material (30), an abrasive (20) are blended in a container (100) and the container is rotated, thereby processing the shape of the workpiece material (30).

Abstract: Provided are a heat sink material made of an alloy or a composite material including two or more types of elements which has an end surface that makes possible formation of an edge portion on which at least a laser element is mounted, a manufacturing method for the same, and a semiconductor laser device including the heat sink material. A heat sink material (10) is made of an alloy or a composite material including two or more types of elements, and provided with a main surface having a relatively large area and a secondary surface having a relatively small area which crosses the main surface, and the secondary surface includes a surface on which a discharging process has been carried out using a discharge wire (200) that is placed approximately parallel to the main surface.

Abstract: A superabrasive wire saw-wound structure includes a superabrasive wire saw (10) formed with an average diameter D and a reel (1). The superabrasive wire saw (10) includes a core wire (11), a bonding material (12) surrounding a surface of the core wire (11), and a plurality of superabrasive grains (13) bonded to the surface of the core wire (11) with the bonding material (12). The reel (1) includes a peripheral surface (2) having one end (3) and the other end (4). The superabrasive wire saw (10) which is to be unreeled successively toward a workpiece is wound around the peripheral surface (2) reciprocatingly between the one end (3) and the other end (4) to be multi-layered. A pitch P for winding the superabrasive wire saw (10) around the peripheral surface (2) between the one end (3) and the other end (4) satisfies a relation of D<P<2D.

Abstract: The invention provides a diamond coated tool having an excellent cutting performance, wear resistance, adhesion resistance and work surface roughness in combination and a method of producing such a tool. A diamond coated tool comprising a substrate and a diamond coating formed on the surface of the substrate, wherein said substrate is made of a cemented carbide or a cermet, diamond grains constituting a growth surface of said diamond coating has an average grain size of about 1.5 micrometers or below, said diamond coating has a thickness ranging from about 0.1 micrometer to 20 micrometers, and said diamond coating has an average surface roughness Ra ranging from about 0.01 micrometer to 0.2 micrometer. Such a diamond coated tool can be obtained by carburizing the substrate consisting of a cemented carbide or a cermet, and growing up a diamond coating thereon.

Abstract: The present invention provides a heat spreader 1 which includes a substrate 7 composed of a metal-containing material and in which a second-component connection surface 6 of the substrate 7 is provided with wettability with a solder and a solder block layer 14 is formed in at least one of respective regions, adjacent to each other, of the second-component connection surface 6 and a side surface 13.

Abstract: A member for a semiconductor device of low price, capable of forming a high quality plating layer on a surface, having heat conductivity at high temperature (100° C.) of more than or equal to 180 W/m·K and toughness that will not cause breaking due to screwing, and will not cause solder breaking due to heat stress when it is bonded to other member with solder, and a production method thereof are provided. A member for a semiconductor device (1) having a coefficient of thermal expansion ranging from 6.5×10?6/K to 15×10?6/K inclusive, and heat conductivity at 100° C.

Abstract: A collective substrate has through-holes. The through-holes each have an interior surface including taper surfaces which are tapered as having an opening size progressively decreasing from a main surface and an external connection surface toward a minimum size hole portion. A semiconductor element mount includes an insulative member cut out of the collective substrate. An imaging device includes an imaging element mounted in a region surrounded by a frame which is bonded to the main surface of the insulative member and closed by a cover. A light emitting diode component includes a light emitting element mounted on the main surface of the insulative member with the minimum size hole portion of the through-hole being filled with an electrically conductive material, the light emitting element being sealed with a fluorescent material and/or a protective resin.