Patents Assigned to AAdvanced Micro Devices, Inc.
  • Simplified method of patterning polysilicon gate in a semiconductor device
    Patent number: 6475892
    Abstract: Polysilicon gates are formed with greater accuracy and consistency by depositing a silicon carbide antireflective layer on the polysilicon layer before patterning. Embodiments also include depositing the polysilicon layer and the silicon carbide layer in the same tool.
    Type: Grant
    Filed: August 2, 1999
    Date of Patent: November 5, 2002
    Assignee: AAdvanced Micro Devices, Inc.
    Inventor: Jayendra D. Bhakta