Abstract: A high voltage shielding device including a main body having an enclosing outer solid insulating wall, an outer electrode arranged on the solid insulating wall providing a first level of insulation to the outer electrode, and a first inner electrode which is uninsulated or has a coating providing a second level of insulation, which second level of insulation is lower than the first level of insulation. The first inner electrode is oriented relative the outer electrode in such a way that the first inner electrode mainly shields a component of an electric field which is perpendicular to a component of an electric field mainly shielded by the outer electrode.

Abstract: A method of controlling a ship as well as to a ship, where the ship includes at least one data collecting unit configured to collect operational data of the ship, at least one control computer for controlling an operation aspect of the ship, at least one window facing a view used in the control, and at least one actuating unit for actuating a control aspect of the ship. The at least one window includes a touch screen on which operational data obtained from the data collecting unit is presented and via which a control command can be entered for controlling the ship.

Abstract: The invention relates to a process and a device for thermal measuring the flow rate (v) of a fluid (3). In conventional thermal sensors the heating power P is supplied in the form of rectangular pulses. According to the invention, the sensor means (1b) are supplied by a heating control (2b) with non-constant heating pulses having a sublinear build-up dynamics P(t). Thereby, a nonlinear behaviour of the threshold value time (tS), until a threshold value temperature (Tm) is reached, as a function of the flow rate (v) can at least partially be compensated. Embodiments concern inter alia a build-up dynamics P(t) proportional to tm and/or to a time-independent amplitude factor (1+RS/RI)?1, wherein m is a Reynolds-number-dependent exponent and RS, Rl are thermal transfer resistances. The advantages are an improved precision, a shorter measuring time and an enlarged measuring range for the flow rate v.

Abstract: A semiconductor device of planar structure has a pn-junction (10) formed by a first layer (1) doped according to a first conductivity type, n or p, and on top thereof a second layer (2) doped according to a second conductivity type. The second layer has a higher doping concentration than the first layer and a lateral edge thereof is provided with an edge termination with second zones of said second conductivity type separated by first zones (4) of said first conductivity type arranged so that the total charge and/or the effective sheet charge density of dopants according to said second conductivity type is decreasing towards the laterally outer border (8) of the edge termination. A third layer (5) doped according to said first conductivity type is arranged on top of said second layer at least in the region of the edge termination for burying the edge termination of the device thereunder.