Patents Assigned to ABB Research Limited
  • Bipolar transistor having a low doped drift layer of crystalline SiC
    Patent number: 6313488
    Abstract: A bipolar transistor having at least a low doped drift layer (14) of crystalline SiC comprises at least one first layer (13) of a semi-conductor material having a wider energy gap between the conduction band and the valence band than an adjacent layer (14) of SiC.
    Type: Grant
    Filed: June 15, 1999
    Date of Patent: November 6, 2001
    Assignee: ABB Research Limited
    Inventors: Mietek Bakowski, Bo Breitholtz, Ulf Gustafsson, Lennart Zdansky
  • Semiconductor device having a hetero-junction between SiC and a Group 3B-nitride
    Patent number: 5847414
    Abstract: A semiconductor device comprises two adjacent semiconductor layers of different materials forming a heterojunction therebetween. A first layer has a larger gap between the conduction band and the valence band that a second layer at the interface between the layers. The second layer is made of SiC and the first layer is made of one of at least a) AlN and b) an alloy of AlN and other Group 3B-nitride.
    Type: Grant
    Filed: August 18, 1997
    Date of Patent: December 8, 1998
    Assignee: ABB Research Limited
    Inventors: Christopher Harris, Andrey Konstantinov, Erik Janzen