Abstract: A method of cleaning a bottom plate, including: providing an adjacent bottom plate with at least one soldering lug, filling a liquid material between the adjacent bottom plate and the soldering lug to cover the substance to be cleaned, and placing the adjacent bottom plate in a chamber, controlling a temperature of the chamber to 25-200° C., generating intermittent pressure increasing and reducing and/or intermittent vacuum pumping for a gas in the chamber using a pressure increasing and reducing device and/or a vacuum generator, causing a fluctuation change of the liquid material using a fluctuation change of the gas, rubbing and scrubbing the liquid material by the fluctuation using the fluctuation change of the gas, and taking the substance to be cleaned attached to the adjacent bottom plate away from the adjacent bottom plate.

Abstract: Provided are a foreign object removal apparatus for a packaged electronic component, and an anomaly control method thereof. The foreign object removal apparatus includes a chamber and a control module configured to control a working temperature and a working pressure of the chamber. The anomaly control method includes: obtaining the working temperature and the working pressure of the chamber; determining whether one of the working temperature and the working pressure of the chamber conforms to a default value; and when one of the working temperature and the working pressure of the chamber does not conform to the default value, starting an emergency handling program by the control module to reduce the working temperature and the working pressure until the packaged electronic component can be transferred to another foreign object removal apparatus.

Abstract: Disclosed is a method for suppressing material warpage by increasing a gas density. The method comprises the following steps: a. placing a plurality of semiconductor elements in a processing chamber; b. increasing a temperature in the processing chamber to a first predetermined temperature and importing a gas, to increase pressure to predetermined pressure and apply the processing chamber in a high-temperature and high-pressure working environment; and performing an isothermal-isobaric process at the first predetermined temperature and the predetermined pressure, to improve temperature uniformity by the high pressure gas; and c. decreasing the temperature in the processing chamber from the first predetermined temperature to a second predetermined temperature and continuing to import the gas into the processing chamber, to maintain the processing chamber at the predetermined pressure; and performing a cooling and isobaric process on each semiconductor element, to suppress warpage of each semiconductor element.

Abstract: Disclosed are embodiments related to chip pressing devices. One such chip pressing device includes a bottom portion and a top portion, which is configured to be attached to or separated from the bottom portion, and has a compartment portion, an upper chamber, and a lower chamber, wherein the upper chamber is spaced apart from the lower chamber by the compartment portion. The upper chamber has one or more gas passages, the lower chamber has one or more gas inlets and one or more gas outlets, and the compartment portion has one or more through-holes. One or more pressing heads movably fit into the through-holes; one or more gas pressure sources connected to at least one of the gas passages of the upper chamber, wherein the upper chamber is pressurized, and one or more heated gas sources are connected to the one or more gas inlets of the lower chamber.

Abstract: A flip chip package manufacturing method is provided. A non-conductive film is pressed onto a wafer with multiple conductive bumps. The wafer is cut to multiple single chips. A carrier is provided, and a thermo-compression flip chip bonding process is executed to bond the non-conductive film onto the carrier. The carrier is transferred into a chamber with enclosed, pneumatic pressurized and heatingable characteristics to execute a de-void process to eliminate the bubbles and to execute a high-temperature soldering process to solder the single chip onto the carrier. The sequence of the de-void process and the high-temperature soldering process may exchange.

Abstract: This invention relates to a method for securing a carrier by gas pressurization to inhibit warpage of the carrier. The method includes following steps: provide a carrier with an upper surface and a lower surface which are opposite to each other; providing an evacuable jig with an apertured surface on which a plurality of apertures are provided; placing and securing one of the upper and lower surfaces of the carrier on the apertured surface in a manner of facing the apertured surface, wherein the surface of the carrier faced to the apertured surface is defined as a first surface, and the other surface opposed to the first surface is defined as a second surface; and gas pressurizing a chamber and evacuating the jig positioned in the chamber, to form a pressure difference between the first surface and the second surface of the carrier, whereby the carrier is pressed on the jig, wherein the chamber is pressurized to a predetermined pressure greater than a standard atmospheric pressure.

Abstract: A gas concentration control device for pressure vessel is provided for controlling gas concentration inside an accommodation space that is set in an interior of a chamber formed inside a pressure vessel curing oven. The pressure vessel curing oven includes a gas inlet tube with a first valve and a gas outlet tube with a second valve, which are in communication with the accommodation space. The gas concentration control device includes a gas concentration detection device, which is operative for timed detection of concentration of a gas inside the accommodation space, and a control unit for setting a predetermined concentration, performing a judgment if the gas concentration inside the accommodation space reaches the predetermined concentration according to a detection result of the gas concentration detection device, and thereby controls the first valve and the second valve according to result of the judgment.

Abstract: A solder spattering suppressed reflow method includes the following steps: (A) preparing a carrier; (B) placing at least one solderable object on the carrier by means of printing, dispensing, mounting or plating; and (C) moving the carrier into an enclosed chamber and carrying out a high-temperature and high-pressure reflow process to have the solderable object heated and melted to bond to the carrier.

Abstract: A flip chip package manufacturing method is provided. A non-conductive film is pressed onto a wafer with multiple conductive bumps. The wafer is cut to multiple single chips. A carrier is provided, and a thermo-compression flip chip bonding process is executed to bond the non-conductive film onto the carrier. The carrier is transferred into a chamber with enclosed, pneumatic pressurized and heatingable characteristics to execute a de-void process to eliminate the bubbles and to execute a high-temperature soldering process to solder the single chip onto the carrier. The sequence of the de-void process and the high-temperature soldering process may exchange.

Abstract: A gas concentration control device for pressure vessel is provided for controlling gas concentration inside an accommodation space that is set in an interior of a chamber formed inside a pressure vessel curing oven. The pressure vessel curing oven includes a gas inlet tube with a first valve and a gas outlet tube with a second valve, which are in communication with the accommodation space. The gas concentration control device includes a gas concentration detection device, which is operative for timed detection of concentration of a gas inside the accommodation space, and a control unit for setting a predetermined concentration, performing a judgment if the gas concentration inside the accommodation space reaches the predetermined concentration according to a detection result of the gas concentration detection device, and thereby controls the first valve and the second valve according to result of the judgment.

Abstract: In a method for removing bubbles from adhesive layer of semiconductor chip package, one or more semiconductor chips are attached to or stacked on a base plate using an adhesive material. The base plate is selected from a substrate, a lead frame, and other carrier for carrying the semiconductor chips thereon. Before the adhesive material starts curing or becomes fully cured, the base plate with the semiconductor chips is placed in a processing tank which is preset to heat at a predetermined heating rising rate to a predetermined temperature and to apply a predetermined pressure for a predetermined period of time, so that bubbles presented in the adhesive material, at an interface between the adhesive material and the base, and at an interface between the adhesive material and the semiconductor chip are expelled from the adhesive material under the temperature and pressure in the processing tank.