Abstract: Coil assembly (1) comprising a planar coil (2) comprising a plurality of turns (15) arranged in a trench (10) in a first magnetic core plate (3) and a second magnetic core plate (8), where the first magnetic core plate (3) and second magnetic core plate (8) are in direct contact with each other or separated by an electrically insulating insulator layer (5) with a thickness (t) equal to or less than 50 ?m and least one tap (6) extends from the coil (2) in a respective via hole (11) through the first magnetic core plate (3) to a respective contact pad (7), wherein the coil (2) and the tap (6) are integrally formed.

Abstract: The present invention provides a wafer (3) comprising a through-wafer via (7) through the wafer (3) formed by a through-wafer via hole (9) and at least a first conductive coating (25). A substantially vertical sidewall (11) of the through-wafer via hole (9) except for a constriction (23) provides a reliable through-wafer via (7) occupying a small area on the wafer. The wafer (3) is preferably made of a semiconductor material, such as silicon, or a glass ceramic. A method for manufacturing such a wafer (3) is described.

Abstract: The present invention provides a method of forming a via hole (9), or a via (7), from a lower side (5) of a substrate (3) for electronic devices towards an upper side (4) of a substrate (3) at least partly through the substrate (3). The method comprises the steps of: etching a first lengthwise portion (11) of the via hole (9) and etching a second lengthwise portion (12) of the via hole (9); whereby the first lengthwise portion (11) and the second lengthwise portion (12) substantially form the via hole (9) and a constriction (23) is formed in the via hole (9). The constriction (23) defines an aperture (24) of the via hole (9) and the method further comprises the step of opening the via hole (9) by etching, with the constriction (23) functioning as an etch mask. A via is formed by at least partly filling the via hole with conductive material. A substrate for electronic devices comprising a via is also provided.

Abstract: The present invention provides a wafer (3) comprising a through-wafer via (7) through the wafer (3) formed by a through-wafer via hole (9) and at least a first conductive coating (25). A substantially vertical sidewall (11) of the through-wafer via hole (9) except for a constriction (23) provides a reliable through-wafer via (7) occupying a small area on the wafer. The wafer (3) is preferably made of a semiconductor material, such as silicon, or a glass ceramic. A method for manufacturing such a wafer (3) is described.

Abstract: The present invention is a thermally controlled switch with high thermal or electrical conductivity. Microsystems Technology manufacturing methods are fundamental for the switch that comprises a sealed cavity formed within a stack of bonded wafers, wherein the upper wafer comprises a membrane assembly adapted to be arranged with a gap to a receiving structure. A thermal actuator material, which preferably is a phase change material, e.g. paraffin, adapted to change volume with temperature, fills a portion of the cavity. A conductor material, providing a high conductivity transfer structure between the lower wafer and the rigid part of the membrane assembly, fills another portion of the cavity. Upon a temperature change, the membrane assembly is displaced and bridges the gap, providing a high conductivity contact from the lower wafer to the receiving structure.