Abstract: The invention provides a method and apparatus for generating large quantities of singlet oxygen and/or ozone at unexpectedly high efficiencies. An electron beam generated by a hollow cathode plasma discharge device (HCD) is spread by disclosed means over an electron-transmissive window past which is flowing an oxygen-containing atmosphere at a high velocity.

Abstract: The invention provides a method and apparatus for generating large quantities of singlet oxygen and/or ozone at unexpectedly high efficiencies. An electron beam generated by a hollow cathode plasma discharge device (HCD) is spread by disclosed means over an electron-transmissive window past which is flowing an oxygen-containing atmosphere at a high velocity.

Abstract: A well-formed ion beam having a high current is extracted from an ion plasma by a low perveance ion extraction system including focus and extraction electrodes, the extraction electrode having an ion exit aperture and being axially spaced from the focus electrode a distance of at least several times the diameter of the ion exit aperture. A voltage differential is applied between the electrodes to define a plasma sheath at the ion source aperture, and the ion beam is extracted from the plasma sheath.

Abstract: An Automatic End Station arrangement for use in conjunction with ion implantation apparatus to provide continuous implantation of semi-conductor wafers is disclosed. Wafers are indexed one by one out of a standard cartridge onto a conveyor track from which they are directed into the slot of a downwardly directed slotted passageway which has been defined between two appropriately sealed plate members. The wafer slides down the passageway until it is situated adjacent to a portion of the passageway in communication with an ion implantation apparatus. The wafer is stopped at that point and the passageway sealed above and below the wafer by inflating a pair of resilient tubes which extend through one of the plate members and across the opening of the passageway. An airtight chamber is thus formed from which the air may be evacuated for effective ion implantation.