Abstract: The invention concerns a method to create fusion-integrated joints of workpieces, in which a workpiece area formed on a workpiece made from a TiAl alloy and a workpiece area formed on another workpiece made from a TiAl alloy or a different high temperature material are joined in a joint area using a joining additive, where the joining additive contains at least one of the elements gallium and indium. The invention also concerns a method to create a material deposit on a workpiece, in which a deposit material is applied to a workpiece area made from a TiAl alloy, where a fusion-integrated joint is produced between the deposit material and the workpiece area, where the deposit material contains at least one of the elements gallium and indium and a filler material.
Type:
Application
Filed:
October 10, 2008
Publication date:
November 25, 2010
Applicant:
ACCESS E.V.
Inventors:
Ulrike Hecht, Victor Vituesevych, Christian Holzschuh
Abstract: A method for producing a multi-crystalline semiconductor material by crystallization from a melt of a base material in which vibration energy in the sonic or ultrasonic range is acoustically coupled by a gaseous transmission medium into the solidifying or cooling material during solidification of the melt and/or during subsequent further cooling. The parameters of this vibration energy are harmonized with the parameters of the melt and the cooling time in such a manner that the dislocation energy in the cooled multi-crystalline material is considerably lower than where there is no vibration energy coupling during the cooling time.
Type:
Grant
Filed:
May 30, 2001
Date of Patent:
January 14, 2003
Assignees:
Max-Planck Gesellschaft zur Forderung der Wissenschaften
e.V., Access e.V.