Abstract: CVD reactors can be cleaned at surprisingly high rates using Non-Green House gases by employing the Non-Green House gases at high temperatures and with relatively high fluorine free radical concentrations so long as high concentrations of oxygen are also used to compensate for the detrimental effects of the high temperatures and free fluorine radical concentrations. Net oxide residue etch rates approximately 2,800 times greater than etch rates achieved with controlled Green House gases can be achieved. This is done by employing a pre-ionization module upstream of the reactor to be cleaned to generate the requisite high density plasma.