Abstract: Methods and an apparatus for removing particles or photoresist on substrates. In an embodiment, a method comprises the following steps: transferring one or more substrates into a DIO3 solution accommodated in a DIO3 bath; after the one or more substrates are processed in the DIO3 bath, taking the one or more substrates out from the DIO3 bath and transferring the one or more substrates into a SPM solution accommodated in a SPM bath; after the one or more substrates are processed in the SPM bath, taking the one or more substrates out from the SPM bath and rinsing the one or more substrates; and transferring the one or more substrates to one or more single chambers to perform single substrate cleaning and drying process. The method combines DIO3 and SPM in one cleaning sequence, which can remove particles or photoresist, especially remove photoresist treated by medium dose or high dose of ion implantation.

Abstract: Disclosed is a film deposition device, having a substrate supporting component and comprising: a central shaft and a supporting base set on the top of the central shaft; a rotary shaft and a supporting ring set on the top of the rotary shaft, wherein the supporting ring is arranged around the supporting base, and the supporting base and the supporting ring are used for supporting a central area and an peripheral area of a substrate respectively; a first actuator connected to the rotary shaft for driving the supporting ring to rotate; a second actuator for driving the supporting ring and the supporting base to move relatively in a vertical direction; and a buffer portion for performing buffering when the substrate comes into contact with the supporting ring.

Abstract: An electroplating chamber leakage plating warning method and system are disclosed. The method includes: positioning the electroplated wafer (100) at a detection location (S100); setting a target detection area (S200) of the wafer (100); operating an image sensor (400) to detect the target detection area (S300) of the wafer (100), and determining whether there is unwanted metal deposition in the target detection area of the wafer (100) (S400); if the determination result indicates the presence of unwanted metal deposition in the target detection area of the wafer (100), indicating a leakage plating occurrence in the electroplating chamber processing the wafer (100), then an alarm command is issued; if the determination result indicates that there is no unwanted metal deposition in the target detection area of the wafer (100), indicating no leakage plating occurrence in the electroplating chamber processing the wafer (100), then no alarm command is issued.

Abstract: A substrate turn-over device includes a tank, a lifting mechanism and a turn-over mechanism. The lifting mechanism is arranged on one side of the tank and is configured to receive a substrate and drive the substrate to ascend and descend. The turn-over mechanism is arranged on the tank, and is used for overturning the substrate, and is configured to move between a substrate-receiving position and a substrate-taking position relative to the lifting mechanism. The substrate-receiving position is a position where the turn-over mechanism receives the substrate from the lifting mechanism, and the substrate-taking position is a position where the substrate is taken from the turn-over mechanism.

Abstract: A coating and developing device comprises a front end module (100), a process station (200), and an interface station (300) that are successively connected, wherein the process station (200) comprises a coating unit (210), a developing unit (220), at least one transversely moving of mobile conveying part (230), and at least one side robot (R0). After a substrate has been processed in the coating unit (210), the substrate is transferred to the mobile conveying part (230) by the at least one side robot (R0), and the substrate is transferred to the interface station (300) by the mobile conveying part (230). After the substrate has been processed in the developing unit (220), the substrate is transferred to the mobile conveying part (230) by the at least one side robot (R0), and the substrate is transferred to the front end module (100) by the mobile conveying part (230).

Abstract: The present invention discloses a transfer method of thin wafer. For thin wafers with different thicknesses, in different transfer stages, a Bernoulli manipulator uses different gas flow rates, so that the problem of chipping of wafers during transfer is solved. Specifically, in a process of moving a wafer out of a wafer cassette, a Bernoulli manipulator uses a small gas flow rate, so as to reduce the suction force on the wafer and weaken warping deformation of the wafer, thereby reducing the risk of cracking or chipping in the process of moving the wafer out of the wafer cassette; after the wafer is moved out of the wafer cassette and in a process of transferring same to a processing chamber, the Bernoulli manipulator uses a large gas flow rate, so as to increase the suction force on the wafer, thereby ensuring the wafer can be stably suctioned on the Bernoulli manipulator during transfer, and avoiding wafer slipping.

Abstract: A furnace tube for thin film deposition, includes: a process tube; a wafer boat, arranged inside the process tube and provided with multi-layered supporting members along the length direction of the process tube; a gas supply tube, arranged inside the process tube and provided with multi-layered gas supply holes along the length direction of the process tube. Multi-layered exhaust holes are arranged on the sidewall of the process tube along the length direction, wherein the distribution area of the gas supply holes is gradually reduced from top to bottom along the length direction of the sidewall of the process tube, and the distribution area of the exhaust holes is gradually reduced from top to bottom along the length direction of the sidewall of the process tube.

Abstract: A liquid storage device includes a tank body including multiple working cycle drain ports for supplying solution to multiple work chambers and a thermal cycle liquid injection port for introducing heated solution into the tank body. The working cycle drain ports are located on opposing side walls of the tank body. A side wall connecting the two side walls has the thermal cycle liquid injection port positioned near or at the middle of the length of the side wall. The liquid storage device further includes a guide element located inside the tank body. The guide element is connected to the thermal cycle liquid injection port, allowing the solution entering from the thermal cycle liquid injection port to flow through the guide element into the tank body and toward each of the working cycle drain ports.

Abstract: Disclosed in the present invention is a method for cleaning an electroplating device. When the electroplating device is cleaned, a partition is used for replacing an ionic membrane framework to separate a cathode chamber and an anode chamber, such that the cathode chamber and the anode chamber are independently cleaned. After an electroplating chamber is cleaned, an exhaust pipe is used for emptying the cleaning solution remaining in the anode chamber and in the liquid inlet channel arranged in a sidewall of the anode chamber, such that no cleaning solution remains after the electroplating chamber is cleaned, thereby eliminating the effect of the residual cleaning solution on the ionic concentration ratio of an electroplating solution in electroplating solution preparation procedures.

Abstract: An electroplating device includes a process chamber, a substrate holding device, a first cover body, a second cover body, a gas supply part and an exhaust part. The electroplating solution is contained in the inner chamber of the process chamber and the inner chamber has an opening. The substrate holding device is used for holding a substrate, and the substrate holding device is moved into or out of the inner chamber through the opening. The first cover body is connected to the substrate holding device to close the opening after the substrate holding device is moved into the inner chamber, so that the inner chamber is in a closed state. The second cover body is used for closing the opening after the substrate holding device is moved out of the inner chamber, so that the inner chamber is in the closed state again.

Abstract: Disclosed is a wafer backside cleaning method, comprising: using a wafer clamping part to hold a wafer, a gap being formed between the wafer clamping part and the wafer; injecting a protective gas into the gap at a first flow rate; adjusting the flow rate of the protective gas from the first flow rate to a second flow rate, and rotating the wafer under the drive of the first rotational speed of the wafer clamping part to clean the backside of the wafer; adjusting the rotational speed of the wafer clamping part from the first rotational speed to a second rotational speed, so that the wafer is driven by the wafer clamping part to rotate for the drying process; stopping rotating the wafer, adjusting the flow rate of the protective gas to the first flow rate again from the second flow rate, and then taking out the wafer; and stopping injecting the protective gas after the wafer is taken out.

Abstract: A high-temperature tube furnace comprises: a process tube (1) with a top cover (101) arranged on the top end thereof, the top cover (101) being provided with through holes (1011); a gas supply pipe (2) communicating with the through holes (1011) of the top cover (101) of the process tube (1), process gas being introduced into the process tube (1) through the gas supply pipe (2) and the through holes (1011) of the top cover (101) of the process tube (1); a wafer boat (3) arranged in the process tube (1), and comprising a supporting frame (301) and supporting plates (302), the supporting plates (302) being distributed in multiple layers along the length direction of the supporting frame (301) and used for supporting multiple substrates (w), each substrate (w) being placed on one supporting plate and each supporting plate supporting the entire bottom of the substrate (w).

Abstract: A wafer cleaning apparatus provided by the present invention comprises a rotary shaft, a chuck arranged on the top of the rotary shaft for retaining the wafer, a fixed shaft coaxially passed through the rotary shaft, and an upper end cover and a lower end cover that block the top and bottom of the fixed shaft respectively. Wherein, the fixed shaft is a hollow shaft with at least one circle of exhaust holes provided on the wall of the fixed shaft. The lower end cover is arranged with a gas inlet port, through which a protective gas is provided to the interior of the fixed shaft. The protective gas forms a positive pressure in the annular space between the fixed shaft and the rotary shaft through the at least one circle of exhaust holes. The present invention provides positive pressure protective gas to the spacing between the fixed shaft and the rotary shaft by opening exhaust holes on the wall of the fixed shaft.

Abstract: A method for cleaning substrates includes rotating a substrate; delivering deionized water on a surface of the substrate for pre wetting the surface of the substrate; delivering chemical solution with high temperature on the surface of the substrate for cleaning the surface of the substrate; changing the rotation speed of the substrate to a low rotation speed, and moving a ultra/mega sonic device. The method further includes turning on the ultra/mega sonic device and supplying a constant or pulse working power in a first cleaning cycle; turning off the ultra/mega sonic device, and delivering a high temperature chemical solution or deionized water. The method further includes turning on the ultra/mega sonic device and supplying a constant or pulse working power in a second cleaning cycle; turning off the ultra/mega sonic device, and delivering rinse chemical solution or deionized water on the surface of the substrate; and drying the substrate.

Abstract: A substrate processing apparatus includes a clamp mechanism, a spray head mechanism, a rotary drive mechanism, a heating mechanism, and a control mechanism. The heating mechanism includes a heating plate arranged below a substrate, wherein the heating plate is provided with at least two cavities in a radial direction, and the cavities are distributed at different radii. During the process of the liquid nozzle moving from the center of the substrate to the edge of the substrate along the radial direction of the substrate, when the liquid nozzle moves to a certain area above the substrate, the control mechanism controls the thermal energy of fluid in the cavity located at the corresponding radius of the area.

Abstract: Disclosed in an embodiment of the present invention is a substrate processing apparatus, comprising a processing chamber, a liquid supply tank and a recovery tank. A first pipeline connects a first liquid inlet and a liquid outlet of the liquid supply tank, so as to circulate the chemical liquid inside the liquid supply tank. A second pipeline connects the first pipeline and a liquid inlet of the processing chamber, so as to transfer the chemical liquid in the liquid supply tank to the processing chamber. A third pipeline connects the first pipeline and a first liquid inlet of the recovery tank, so as to transfer the chemical liquid in the liquid supply tank to the recovery tank. A fourth pipeline connects a liquid outlet of the processing chamber and a second liquid inlet of the recovery tank, so as to return the used chemical liquid in the processing chamber to the recovery tank.

Abstract: Disclosed is a substrate processing method, which comprises the following steps: S1: transferring a substrate plated with a first metal layer from a first plating chamber to a second plating chamber; S2: after transferring the substrate to the second plating chamber, forming a water film layer on the front side of the substrate; S3: electroplating a second metal layer on the first metal layer. By means of a step of forming a water film layer before electroplating in a plating chamber, the present invention has advantages of preventing delamination between two metal layers and solving product recess abnormality.

Abstract: An electroplating device includes a process chamber, a paddle plate and a driving mechanism. The driving mechanism is used for driving the paddle plate to move back and forth to make the paddle plate stir the electroplating solution in the process chamber when a substrate is electroplated. The electroplating device further includes a cleaning assembly and a connecting bracket. The cleaning assembly is used for spraying a cleaning solution onto the electroplated substrate. One end of the connecting bracket is connected to the paddle plate, and the other end of the connecting bracket is connected to the driving mechanism, and the driving mechanism drives the paddle plate to move back and forth via the connecting bracket. The connecting bracket is opened with a hollowed-out area, and the cleaning solution sprayed onto the substrate is collected after passing through the hollowed-out area.

Abstract: Disclosed in the invention is a thin film deposition a device, comprising: a processing chamber; a gas supply assembly, which is arranged on the top wall of the processing chamber; a heating tray, which is arranged below the gas supply assembly for bearing and heating the substrate; a radio frequency source; and a rotating mechanism configured to control the rotation of the substrate, or the rotation of the heating tray, or control the synchronous rotation of the substrate and the heating tray, wherein the rotation shaft for rotation is perpendicular to and passing through the substrate. The radio frequency source is kept in an on state during rotation.

Abstract: A drying apparatus is based on supercritical fluid. The drying apparatus includes: an upper cover; a base, arranged below the upper cover and the base and the upper cover; a substrate tray, arranged on the base; a first fluid supply tube, arranged on the top wall of the upper cover; a fluid disturbance plate, arranged below the first fluid supply tube; a second fluid supply tube, arranged on a first side wall of the upper cover; and a fluid discharge tube, arranged on a second side wall of the upper cover. The inner space of the closed chamber can be minimized by using the drying apparatus, thereby saving the usage amount of the supercritical fluid, and reducing the usage costs.