Abstract: There are provided a radiation detection module, a printed circuit board, and a radiological imaging apparatus which make it possible to enhance spatial resolution without increasing channel number, and thereby to perform high-accuracy diagnosis. The radiation detection module includes a plurality of radiation detectors, and a wiring board on which the plurality of radiation detectors are mounted in a manner of being arranged in at least a radiation traveling direction. Here, on the wiring board, a pair of the radiation detectors which are adjacent to each other in the radiation traveling direction are electrically connected to each other, thereby configuring one detector structure (i.e., detection channel). Moreover, the radiation detectors are mounted onto the wiring board such that respective connection parts of electrodes, which are to be electrically connected to each other, are in a mutually-facing state.

Abstract: A radiation detection module and radiological imaging apparatus capable of improving spatial resolution. A semiconductor radiation detector includes a plurality of semiconductor radiation detector elements and conductive members which are copper plates. A detector element provides an anode electrode on one of facing sides of a semiconductor region and a cathode electrode on the other side. The respective detector elements are arranged in parallel in such a way that the cathode electrodes and anode electrodes face each other respectively, and the anode electrodes are electrically connected together and the cathode electrodes are electrically connected together via the conductive members respectively.

Abstract: Disclosed is a semiconductor radiation detector element of Schottky barrier type, comprising: a compound semiconductor crystal including cadmium and tellurium as main components; and voltage application means for applying voltage to the compound semiconductor crystal. According to the present invention, said voltage application means includes a compound of indium, cadmium and tellurium: InxCdyTez formed on one surface of the compound semiconductor crystal. Preferably, the rate “z” of occupation of tellurium in the compound InxCdyTez is in the range of not less than 42.9%, but not greater than 50% by ratio of number of atoms. Furthermore, preferably, the rate “y” of occupation of cadmium in the compound InxCdyTez is in the range of not less than 0%, but not greater than 10% by ratio of number of atoms.

Abstract: Disclosed is a semiconductor radiation detector element of Schottky barrier type, comprising: a compound semiconductor crystal including cadmium and tellurium as main components; and voltage application means for applying voltage to the compound semiconductor crystal. According to the present invention, said voltage application means includes a compound of indium, cadmium and tellurium: InxCdyTez formed on one surface of the compound semiconductor crystal. Preferably, the rate “z” of occupation of tellurium in the compound InxCdyTez is in the range of not less than 42.9%, but not greater than 50% by ratio of number of atoms. Furthermore, preferably, the rate “y” of occupation of cadmium in the compound InxCdyTez is in the range of not less than 0%, but not greater than 10% by ratio of number of atoms.