Abstract: A thickness measurement device includes: a terahertz wave emitter emitting terahertz waves toward an edge of the second layer; a terahertz wave detector detecting, with reference to a reflected location of the terahertz waves, a first terahertz wave (R1) reflected from a surface of the second layer, a second terahertz wave (R2) reflected from an exposed surface of the first layer, and a third terahertz wave (R3) reflected from an interface between the first layer and the second layer; and a calculator calculating an index of refraction of the second layer based on a detection time difference (?t1) between a detection time of the first terahertz wave (R1) and a detection time of the second terahertz wave (R2) and a detection time difference (?t2) between the detection time of the first terahertz wave (R1) and a detection time of the third terahertz wave (R3).

Abstract: An epoxy molding compound thickness measurement method and the measurement device are disclosed, and the epoxy molding compound thickness measurement method and the measurement device capable of measuring in a non-contact manner the thickness of an epoxy molding compound applied on a semiconductor chip during semiconductor packaging only with reflected light are disclosed.

Abstract: A thickness measuring device of the present invention includes a supporter which supports a specimen, an emission unit which emits an electromagnetic wave in a direction toward the specimen, a chamber which surrounds the specimen, a receiving unit which receives an electromagnetic wave output in a direction in which the chamber is positioned, and a control unit which receives a signal from the receiving unit and calculates a thickness of the specimen. At least a part of the chamber transmits a part of the electromagnetic wave and reflects the remaining part of the electromagnetic wave. The receiving unit receives a first electromagnetic wave having a first peak and a second electromagnetic wave having a second peak. The first peak occurs at a first time point, the second peak occurs at a second time point, and a difference between the first time point and the second time point is a first period or more.

Abstract: According to an embodiment of a specimen inspection apparatus, the specimen inspection apparatus may comprise: a radiation unit; a reflection unit; a focus adjusting unit; a reception unit; and a control unit. The specimen inspection apparatus may comprise: a radiation unit for emitting a terahertz wave; a reflection unit for changing the path of a terahertz wave emitted from the radiation unit; a focus adjusting unit for forming an irradiation region on a specimen according to the path of the terahertz wave; a reception unit for receiving individual terahertz waves obtained by reflection, by the specimen, of the terahertz wave irradiated onto the first region; and a control unit for controlling the distance between at least two elements among the plurality of elements, and detecting whether the specimen is defective, according to the reflectivity difference between the terahertz waves.

Abstract: Disclosed is an optical image stabilization (OIS) structure that prevents camera shake occurring in a smartphone camera, and a camera module having the same. The OIS structure includes: a base housing provided with an OIS coil; a lens housing disposed over the base housing to be apart therefrom; and an OIS leaf spring for allowing the base housing and the lens housing to be elastically coupled to each other.

Abstract: Disclosed is an optical image stabilization (OIS) structure that prevents camera shake occurring in a smartphone camera, and a camera module having the same. The OIS structure includes: a hexahedral base housing provided with an OIS coil; a hexahedral lens housing disposed over the base housing to be apart therefrom; and an OIS leaf spring for allowing the base housing and the lens housing to be elastically coupled to each other.