Abstract: A single stage transmitter that operates at high speed is configured to operate as a driver in write mode and a termination in read mode. The driver configuration includes two circuits. The first circuit includes a PMOS cross-coupled device and a PMOS cascode circuit. The second circuit includes a NMOS cross-coupled device and a NMOS cascode circuit. The PMOS cross-coupled device and the NMOS cross-coupled device is connected in series by alternating current (AC) coupling capacitors. The termination configuration includes a third circuit including MOSFET transmission gates and an inverter controlled by a termination mode enable signal. In write mode, the third circuit of the single stage transmitter is turned off and the first and second circuits are operational. In read mode, the first and second circuits of the single stage transmitter are inactive and the third circuit is operational.

Abstract: In the manufacture of an EPROM or EEPROM semiconductor device that includes a core region and a peripheral region, a nitride layer is formed over the core region and peripheral region, and an oxide layer is formed over the nitride layer. A layer of photoresist is provided over the oxide layer and is patterned to expose a portion of the oxide layer overlying the core region. A wet etch step is undertaken to remove the exposed portion of the oxide layer, using the patterned photoresist as a mask, and leaving exposed a portion of the nitride layer overlying the core region. After removal of the photoresist, the exposed portion of the nitride layer is etched by a wet etch step with hot phosphoric acid, using the pattered oxide layer as a mask.