Abstract: The present invention provides a single photon avalanche diode device. The device has a logic substrate comprising an upper surface. The device has a sensor substrate bonded to an upper surface of the logic substrate. In an example, the sensor substrate comprises a plurality of pixel elements spatially disposed to form an array structure. In an example, each of the pixel elements has a passivation material, an epitaxially grown silicon material, an implanted p-type material configured in a first portion of the epitaxially grown material, an implanted n-type material configured in a second portion of the epitaxially grown material, and a junction region configured from the implanted p-type material and the implanted n-type material.
Type:
Grant
Filed:
July 22, 2022
Date of Patent:
August 29, 2023
Assignee:
Adaps Photonics Inc.
Inventors:
Ching-Ying Lu, Yangsen Kang, Shuang Li, Kai Zang
Abstract: The present invention provides a single photon avalanche diode device. The device has a logic substrate comprising an upper surface. The device has a sensor substrate bonded to an upper surface of the logic substrate. In an example, the sensor substrate comprises a plurality of pixel elements spatially disposed to form an array structure. In an example, each of the pixel elements has a passivation material, an epitaxially grown silicon material, an implanted p-type material configured in a first portion of the epitaxially grown material, an implanted n-type material configured in a second portion of the epitaxially grown material, and a junction region configured from the implanted p-type material and the implanted n-type material.
Type:
Grant
Filed:
January 28, 2020
Date of Patent:
November 22, 2022
Assignee:
ADAPS PHOTONICS INC.
Inventors:
Ching-Ying Lu, Yangsen Kang, Shuang Li, Kai Zang