Abstract: Provided is a particle trapping apparatus for preventing an error of a pressure measurement. A particle trapping apparatus for preventing an error of a pressure measurement includes a pressure-measuring means; a measuring pipe for connecting the pressure-measuring means to a processing chamber; and a trapping means for capturing particles in a gas flowing through the measuring pipe, wherein the trapping means is coupled to the measuring pipe or is a portion of the measuring pipe.

Abstract: Provided is an apparatus for monitoring an exchanging process of a semiconductor part and a method for the same. The apparatus comprises finger having a structure capable of loading the part and transferred by a robot for exchanging; and at least one image obtaining means coupled to the finger and obtaining an image of an exchanging position.

Abstract: Provided is a structure variable type of a plasma source coil and a method for controlling the same. The plasma source coil comprises a plurality of coil branches extending in a spiral shape based on a central part, wherein at least one coil branch has a structure in which the extending direction or a tilting level can be adjusted.

Abstract: Provided is a separate plasma source coil and a method of controlling the same. The separate plasma source coil includes a center coil group disposed around a coil center and including one or more linear center coils, and an edge coil group disposed around the center coil group and including one or more linear edge coils.

Abstract: A plasma chamber having a plasma source coil includes a chamber body, a plasma source coil, and an edge bushing. The chamber body includes a reaction space, which is limited by a sidewall, a lower exterior wall, and an upper dome, and forms plasma. The plasma source coil arranged on the dome includes M unit coils corresponding to an integer greater than “2”. The M unit coils having a predetermined rpm value “n” indicative of a positive integer are extended from a center bushing having a predetermined radius at a center part, and are spirally arranged along a circumference of the center bushing, such that the plasma is formed in the reaction space. The edge bushing arranged between the dome of the chamber body and the plasma source coil, and is configured in the form of a cylindrical shape to overlap with an edge of the wafer arranged in the reaction space.

Abstract: Disclosed herein is a plasma source which can create plasma within a reaction chamber to process a semiconductor wafer. The plasma source comprises a bushing equipped at an upper center of the reaction chamber, and a plurality of source coils linearly extending from the bushing to a periphery of the reaction chamber. With the linear source coils, it is possible to prevent deviation in magnetic field from the center to the periphery of the plasma source in the radial direction, resulting in easy control of critical dimensions and uniform etching rate both at the center and periphery of the reaction chamber.

Abstract: A plasma equipment seasoning method. The seasoning method comprising the steps of measuring the ratio of optical emission intensity of silicon oxide (SiOx)-based chemical species to optical emission intensity of carbon fluoride compound (CFy)-based chemical species present in a process chamber of plasma equipment before operating the plasma equipment to perform a plasma process, determining whether the value of the measured optical emission intensity ratio is within a predetermined range of normal state or not, and, when reaction gas to be used in the plasma process is supplied into the process chamber based on the result of determination such that the value of the measured optical emission intensity ratio is within the predetermined range of normal state, seasoning the interior of the process chamber to change the ratio of components of the reaction gas, and thus, to change the optical emission intensity ratio.