Abstract: The electrostatic chuck comprises a chuck base for supporting a wafer, a dielectric film mounted on the chuck base, the dielectric film having an electrode for supplying direct current voltage to provide an electrostatic force to fix the wafer, the electrode disposed in the dielectric film, and a cooling channel for supplying refrigerant to the dielectric film to control the temperature of the wafer.

Abstract: Disclosed is plasma etching method and apparatus for manufacturing a semiconductor device. The plasma etching apparatus includes a chamber in which a wafer to be etched is loaded, at least one CCD, at least one gas supply unit for supplying etching gases into the chamber; and at least one state control unit. The state control unit comprises a light component extractor, a estimator, a comparator, a controller, and a timer. The plasma etching apparatus also comprises a chamber in which a wafer to be etched is loaded; a first dome sealing an upper end of the chamber; a coil winded on the dome and generation electric field into the chamber; at least one light emission tip disposed through a predetermined portion of the dome, so as to emit light toward the wafer and receive light reflected by the wafer; and a plurality of nozzles, each of which is disposed around light emission tip and through the, predetermined portion of the dome, so as to supply gases into the chamber.