Patents Assigned to Adavnced Micro Devices, Inc.
  • Ultra-uniform silicide system in integrated circuit technology
    Patent number: 7307322
    Abstract: A structure of an integrated circuit is provided. A gate dielectric is formed on a semiconductor substrate, and a gate is formed over a gate dielectric on the semiconductor substrate. Source/drain junctions are formed in the semiconductor substrate. Ultra-uniform suicides are formed on the source/drain junctions, and a dielectric layer is deposited above the semiconductor substrate. Contacts are then formed in the dielectric layer to the ultra-uniform silicides.
    Type: Grant
    Filed: October 17, 2005
    Date of Patent: December 11, 2007
    Assignee: Adavnced Micro Devices, Inc.
    Inventors: Robert J. Chiu, Jeffrey P. Patton, Paul R. Besser, Minh Van Ngo