Abstract: The invention provides a compound represented by the formula (1) wherein X is CH2 or an oxygen atom, Y is an oxygen atom or a sulfur atom, R1 is a substituted phenyl group or the like, R2 is a substituted phenyl group or the like, and R3 is a hydrogen atom or the like, or salts thereof, pest control agents containing the compound as an active ingredient, and methods of use thereof. The compound can be useful, for example, as an agrohorticultural insect pest control agent in the production of crops in agriculture, an ectoparasite control agent for animals, and an endoparasite control agent for animals.

Abstract: The invention provides compounds represented by the formula (1) wherein X and Y are oxygen atoms or sulfur atoms, Z is a hydroxyl group or the like, R1 and R2 are hydrogen atoms and the like, R3 is a substituted phenyl group or the like, and Q is a substituted phenyl group or the like, or salts thereof, pest control agents containing the compounds as active ingredients, and methods for use thereof.

Abstract: The invention provides compounds represented by the formula (1) wherein X and Y are oxygen atoms or sulfur atoms, Z is a hydroxyl group or the like, R1 is a hydrogen atom or the like, R2, R3 and R4 are hydrogen atoms and the like, and R5 and Q are substituted phenyl groups and the like, or salts thereof, pest control agents containing the compounds as active ingredients, and methods for use thereof.

Abstract: The invention provides compounds represented by the formula (1) wherein X and Y are oxygen atoms or sulfur atoms, Z is a hydroxyl group or the like, R1 and R2 are alkyl groups and the like, R4 and R5 are alkyl groups and the like, R3 and R6 are hydrogen atoms and the like, R7 is a substituted phenyl group or the like, and Q is an aryl group or the like, or salts thereof, pest control agents containing the compounds as active ingredients, and methods for use thereof.

Abstract: The invention provides compounds represented by the formula (1) wherein X and Y are oxygen atoms or sulfur atoms, Z is a hydroxyl group or the like, R1 is an alkyl group or the like, R2 and R4 are substituted phenyl groups and the like, R3, R5 and R6 are hydrogen atoms and the like, and R7 is a substituted phenyl group or the like, or salts thereof, pest control agents containing the compounds as active ingredients, and methods for use thereof.

Abstract: The present invention provides a metal alkoxide compound represented by the following general formula (1), a thin-film-forming raw material containing the same, and a thin film production method of forming a metal-containing thin film using the raw material:

Abstract: A non-aqueous electrolyte power storage device in which a coating material having a silanol group is present at least on a surface of an electrode active material layer and a sulfur-based material is contained in a cell, the electrode active material layer contains an electrode active material and a resin-based binder, the electrode active material is an active material capable of being alloyed with a metal element identical to an ion species responsible for electrical conduction or an active material capable of absorbing ions responsible for electrical conduction, and the coating material having a silanol group is a silicate containing a siloxane bond as a component or a silica fine particle aggregate (containing a siloxane bond as a component).

Abstract: Described herein are metal compounds and methods of fabricating semiconductor devices using the same. The metal compounds include a material of Chemical Formula 1.

Abstract: An object of the present invention is to provide a method for preparing ambrein, which can easily and efficiently obtain the ambrein. The object can be solved by a mutated tetraprenyl-?-curcumene cyclase wherein (1) a 4th amino acid residue of a DXDD motif, aspartic acid, is substituted with an amino acid other than aspartic acid, and (2) an amino acid adjacent to the N-terminus of a (A/S/G)RX(H/N)XXP motif is substituted with an amino acid other than tyrosine, or a 4th amino acid of the GXGX(G/A/P) motif is substituted with an amino acid other than leucine.

Abstract: To provide an electrode for non-aqueous electrolyte batteries, which traps hydrogen sulfide gas, generated from the inside thereof for some reason, in the electrode, and suppresses the outflow of hydrogen sulfide gas to the outside of the battery. An electrode for lithium ion batteries includes a coating material which contains a silanol group and is present on at least a surface of an active material layer. The active material layer contains a sulfur-based material and a resin-based binder. The sulfur-based material is an active material capable of alloying with lithium metal or an active material capable of occluding lithium ions. The coating material containing the silanol group is a silicate having a siloxane bond or a silica fine particle aggregate having a siloxane bond as a component.

Abstract: A method of forming an oxide layer, the method including forming a first material layer on a semiconductor substrate, the first material layer including a polysiloxane material, wherein, from among Si—H1, Si—H2, and Si—H3 bonds included in the polysiloxane material, a percentage of Si—H2 bonds ranges from about 40% to about 90%, performing a first annealing process on the first material layer in an inert atmosphere, and performing a second annealing process on the first material layer in an oxidative atmosphere.

Abstract: A niobium compound and a method of forming a thin film using the niobium compound, the compound being represented by the following General formula I: wherein, in General formula I, R1, R4, R5, R6, R7, and R8 are each independently a hydrogen atom, a C1-C6 linear or branched alkyl group or a C3-C6 cyclic hydrocarbon group, at least one of R4, R5, R6, R7, and R8 being a C1-C6 linear or branched alkyl group, and R2 and R3 are each independently a hydrogen atom, a halogen atom, a C1-C6 linear or branched alkyl group, or a C3-C6 cyclic hydrocarbon group.

Abstract: Disclosed is a tungsten precursor and a method of forming a tungsten-containing layer. The tungsten precursor has a structure represented by Formula 1 below. In Formula 1, R1, R2, and R3 independently include a straight-chained or a branched alkyl group including a substituted or an unsubstituted C1-C5; R4 and R5 independently include a straight-chained or a branched alkyl group including a C1-C5, halogen element, dialkylamino group having C2-C10, or trialkylsilyl group including a C3-C12; n is 1 or 2, and m is 0 or 1. Also, n+m=2 (e.g., when n is 1, m is 1). When n is 2, m is 0 and each of R1 and R2 are provided in two. Two R1s are independently of each other, and two R2s are independently of each other.

Abstract: Described herein are metal compounds and methods of fabricating semiconductor devices using the same. The metal compounds include a material of Chemical Formula 1.

Abstract: An object of the present invention is to provide a method for preparing ambrein, which can easily and efficiently obtain the ambrein. The object can be solved by a mutated tetraprenyl-?-curcumene cyclase wherein (1) a 4th amino acid residue of a DXDD motif, aspartic acid, is substituted with an amino acid other than aspartic acid, and (2) an amino acid adjacent to the N-terminus of a (A/S/G)RX(H/N)XXP motif is substituted with an amino acid other than tyrosine, or a 4th amino acid of the GXGX(G/A/P) motif is substituted with an amino acid other than leucine.

Abstract: A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.

Abstract: Provided are an aluminum compound and a method for manufacturing a semiconductor device using the same. The aluminum compound may be represented by Formula 1.

Abstract: A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):

Abstract: A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.

Abstract: A vanadium compound represented by following General Formula (1). In General Formula (1), R1 represents a linear or branched alkyl group having 1 to 7 carbon atoms and n represents a number from 2 to 4. R1 preferably represents a secondary alkyl or a tertiary alkyl. It is preferred that in General Formula (1), n is 2 and R1 is tert-butyl group or tert-pentyl group, since the compound has a broad ALD window and high thermal decomposition temperature to be able to form a good quality vanadium-containing thin film that has a small carbon residue when used as an ALD material.