Abstract: In accordance with an embodiment of the present invention, a resistive switching device comprises a bottom electrode, a switching layer disposed over the bottom electrode, and a top electrode disposed over the switching layer. The top electrode comprises an alloy of a memory metal and an alloying element. The top electrode provides a source of the memory metal. The memory metal is configured to change a state of the switching layer.
Type:
Grant
Filed:
July 25, 2012
Date of Patent:
September 30, 2014
Assignees:
Adesto Technologies France SARL, Adesto Technologies Corporation
Inventors:
Wei Ti Lee, Chakravarthy Gopalan, Yi Ma, Jeffrey Shields, Philippe Blanchard, John Ross Jameson, Foroozan Sarah Koushan, Janet Wang, Mark Kellam