Abstract: A package carrier is provided. The package carrier includes a wiring layer and an insulating pattern. The wiring layer includes at least one connecting pad and at least one mounting pad. The mounting pad is used for mounting an electronic component, and the connecting pad is used for electrically connecting the electronic component. The insulating pattern is stacked on and connected to the wiring layer. A boundary surface is formed between the wiring layer and the insulating pattern. Both of the wiring layer and the insulating pattern do not extend over the boundary surface. In addition, an electronic package including the package carrier is also provided.

Abstract: A method of manufacturing package carrier is provided. In the method, a holding substrate and a conductive layer are provided. The conductive layer is on the holding substrate. Next, an insulating pattern is formed on the conductive layer. The insulating pattern exposes a portion of the conductive layer. A supporting board is provided. Next, the insulating pattern is detachably fixed in the supporting board. After the insulating pattern is detachably fixed in the supporting board, the holding substrate is removed, and the conductive layer remains. After removing the holding substrate, the conductive layer is patterned to form a wiring layer.

Abstract: The present invention discloses a semiconductor device package structure with redistribution layer (RDL) and through silicon via (TSV) techniques. The package structure comprises an electronic element which includes an dielectric layer on a backside surface of the electronic element, a plurality of first conductive through vias across through the electronic element and the dielectric layer, and a plurality of conductive pads accompanying with the first conductive through vias on an active surface of the electronic element; a filler material disposed adjacent to the electronic element; a first redistribution layer disposed over the dielectric layer and the filler material, and connected to the first conductive through vias; a first protective layer disposed over the active surface of the electronic element, the conductive pads, and the filler material; and a second protective layer disposed over the redistribution layer, the dielectric layer, and the filler material.

Abstract: The conductive line structure of a semiconductor device including a base; at least one patterned conductive layer formed over the base; a conductive line formed over the at least one patterned conductive layer; a protection layer that encompasses the top surface and sidewall of the conductive line to prevent undercut generated by etching. The structure further comprises an underlying layer under the conductive line. The underlying layer includes Ni, Cu or Pt. The conductive line includes gold or copper. The at least one patterned conductive layer includes at least Ti/Cu. The protection layer includes electro-less plating Sn, Au, Ag or Ni.

Abstract: The present invention provides a three-dimensional System-In-Package (SIP) Package-On-Package (POP) structure comprising a support element formed around a first electronic device. A filling material is filled between the first electronic device and the support element. Signal channels are coupled to first die pads of the first electronic device. Conductive elements form signal connection between the first end of the signal channels and the second die pads of a second electronic device.

Abstract: A chip packaging structure comprising a chip, a plurality of conductive pillars surrounding the chip, an encapsulation encapsulating the chip and the conductive pillars, and a connecting layer is provided. The encapsulation has a first side and a second side corresponding to the first side. The connecting layer is disposed at the first side of the encapsulation and electrically connected between the chip and the conductive pillars. Furthermore, a chip packaging process accompanying the chip packaging structure is also provided. The chip packaging structure is more useful and powerful and is suitable for various chip packaging applications, and the chip packaging process can reduce the manufacturing time and save the production cost.

Abstract: The injection molding system comprises a substrate, an inner cover, a molding tool, and a bottom plate. The substrate is used to locate at least one semiconductor device under molding and the inner cover with at least one first injection via, cavity and runner placed over the substrate. In addition, the molding tool includes at least one second injecting via aligned with the runner and the bottom plate is placed under the substrate. Furthermore, a filling material is filled into the cavity and runner of the inner cover during molding. In order to avoid overflowing the filling material, the system further comprises an O-ring placed between the molding tool and the inner cover. The inner radius of the O-ring corresponds with the inner radius of the injection via and is aligned with it.

Abstract: The present invention discloses a package module with EMI shielding and the method thereof. The package module has a substrate or a PCB with at least one ground pad. A variety of electronic components are mounted on the substrate. The dielectric layer overlays a selected area which covers some electronic components and ground pads. Openings are formed within the dielectric layer and above ground pads. The shielding layer with at least two metal layers covers the dielectric layer and is electrically coupled, via the openings, to the ground pad. In general, there is a protection layer to encapsulate the entire substrate. The package module of the present invention not only achieves the requirement of miniature packaging but also reduces EMI caused by high speed electronic devices.