Abstract: In one embodiment, a thermistor probe includes a probe body, a high temperature NTC semiconductor thermistor attached to the probe body, and at least two conductive leads attached to the high temperature NTC semiconductor thermistor.
Abstract: A method of manufacturing high temperature thermistors. A polycrystalline thermistor body is formed from a material selected from a list consisting of bulk polycrystalline Si with intrinsic conductivity and bulk polycrystalline Ge with intrinsic conductivity. At least one ohmic contact is formed on at least one surface of the polycrystalline thermistor body.
Abstract: A high temperature NTC thermistor includes a polycrystalline thermistor body, selected from a list consisting of polycrystalline Si with intrinsic conductivity and polycrystalline Ge with intrinsic conductivity. At least one ohmic contact is disposed on at least one surface of the polycrystalline thermistor body.
Abstract: A method of manufacturing high temperature thermistors from an ingot. The high temperature thermistors can be comprised of germanium or silicon. The high temperature thermistors have at least one ohmic contact.
Abstract: An apparatus for temperature measurement comprising at least one insulator, at least one thermistor attached to the insulator, the thermistor having at least one of a Ge NTC die and an Si NTC die, and at least one outer electrically conductive film attached to the insulator and electrically coupled to the thermistor.