Abstract: A method and apparatus is provided for providing local screen data of a source device, such as a personal computer, to a sink device, such as a television, game console, or home theatre system, at a rate determined by the sink device. In one example, the method and apparatus responds to requests from the sink device to provide local screen data by serving the local screen data to the sink device from a circular buffer. The local screen data is written to the circular buffer in FIFO order based on the requests from the sink device, and read from the circular buffer based on the requests.

Abstract: A hardware-based aperture compression system permits addressing large memory spaces via a limited bus aperture. Streams are assigned dynamic base addresses (BAR) that are maintained in registers on sources and destinations. Requests for addresses lying between BAR and BAR plus the size of the bus aperture are sent with BAR subtracted off by the source and added back by the destination. Requests for addresses outside that range are handled by transmitting a new, adjusted BAR before sending the address request.

Abstract: Embodiments include a video data encoding method comprising receiving video input frames, and performing motion estimation on the video received frames. The motion estimation comprises performing a hierarchical motion search to find motion vectors with optimum sum of absolute difference (SAD) values, and performing spatial filtering of the motion vectors, wherein spatial filtering comprises making some pairs of motion vectors the same to achieve a zero differential.

Abstract: The inventive method provides MOSFET's with deep source/drain junctions and shallow source/drain extensions. The invention provides on a semiconductor wafer a gate stack with side spacers. The side spacers are etched so that a known thickness of the side spacers is left. An ion beam is used to implant Si.sup.+ or Ge.sup.+ or Xe.sup.+ to amorphize the silicon region, creating an amorphous region with two different depths. A high dose ion beam is then used to implant a dopant. An oxide layer is then deposited as a barrier layer, and then a metal layer is deposited to improve laser energy absorption. Laser annealing is used to melt the amorphous silicon region which causes the dopant to diffuse into the amorphous silicon region creating deep source/drain junctions and shallow source/drain extensions. Conventional techniques are then used to complete the transistor, which includes silicidation of the source/drain junctions. The deep source/drain junctions allow for an easier silicidation.