Patents Assigned to Advanced Chemical Systems International Incorporated
  • Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution
    Patent number: 5320709
    Abstract: A method for selectively removing oxidized organometallic residues, oxidized organosilicon residues, native oxides, and damaged oxides created in plasma-etching through emersion of plasma-etched silicon wafers in a solution of anhydrous ammonium fluoride and a polyhydric alcohol, which is substantially free of hydrogen fluoride and water.
    Type: Grant
    Filed: February 24, 1993
    Date of Patent: June 14, 1994
    Assignee: Advanced Chemical Systems International Incorporated
    Inventors: Bill Bowden, Debbie Switalski