Patents Assigned to Advanced Device Research Inc.
  • Enhancement-mode field effect transistor having metal oxide channel layer
    Patent number: 9680030
    Abstract: An enhancement-mode n-type field effect transistor is disclosed to have a metal oxide channel layer, a gate dielectric layer, a gate electrode, a source electrode, and a drain electrode. The metal oxide channel layer has a material selected from SnO2, ITO, ZnO, SnO2 and In2O3. The metal oxide channel layer has a thickness less than a threshold value to exhibit pinch-off behavior in transfer characteristics and has a mobility trend without saturation under positive operational voltage.
    Type: Grant
    Filed: December 2, 2015
    Date of Patent: June 13, 2017
    Assignee: Advanced Device Research Inc.
    Inventors: Chen-Wei Shih, Albert Chin