Patents Assigned to Advanced Energy Fund Limited Partnership
  • Epitaxial compositions
    Patent number: 5268327
    Abstract: A method for manufacturing, by chemical depostion from the vapor phase, epitaxial composites comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium alluminum arsenide (GaAlAs) on single crystal silicon substrates.
    Type: Grant
    Filed: May 19, 1992
    Date of Patent: December 7, 1993
    Assignee: Advanced Energy Fund Limited Partnership
    Inventor: Stanley M. Vernon
  • Metal organic chemical vapor deposition of 111-v compounds on silicon
    Patent number: 4588451
    Abstract: Expitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are disclosed. Also disclosed is a process for manufacturing, by chemical deposition from the vapor phase, epitaxial composites as above described, and to semiconductor devices based on such epitaxial composites. The composites have particular utility for use in making light sensitive solid state solar cells.
    Type: Grant
    Filed: April 27, 1984
    Date of Patent: May 13, 1986
    Assignee: Advanced Energy Fund Limited Partnership
    Inventor: Stanley M. Vernon