Abstract: A processing system having a processing chamber that includes a substrate holder and an electrode. The processing system can include a pressure control system, gas supply system, and monitoring system. A multi-frequency RF source is coupled to the electrode using a reduced-element matching network having a single variable element. The multi-frequency RF source is set to a first frequency to ignite a plasma and to a second frequency to maintain the plasma.
Type:
Application
Filed:
September 30, 2003
Publication date:
March 31, 2005
Applicants:
TOKYO ELECTRON LIMITED, Advanced Engergy Industries, Inc.
Inventors:
Hideaki Miyoshi, Gemunu Dharmasena, Tsutomu Higashiura, Jack Gilmore, Joseph Osselburn, Theresa Beizer