Patents Assigned to Advanced Industrial Science and Technology
  • Patent number: 12270020
    Abstract: A cell culture instrument configured to detach cells at a desired position and a cell processing method using the cell culture instrument. The cell culture instrument includes: a substrate; and a photoreactive layer having a photosolubility and a photothermal convertibility, wherein the photoreactive layer is laminated on the substrate, and the photoreactive layer includes a polymer having a photosolubility and a photothermal convertibility.
    Type: Grant
    Filed: December 13, 2019
    Date of Patent: April 8, 2025
    Assignees: National Institute of Advanced Industrial Science and Technology, Kataoka Corporation
    Inventors: Kimio Sumaru, Toshiyuki Takagi, Toshiyuki Kanamori, Kana Morishita, Junichi Matsumoto
  • Patent number: 12265041
    Abstract: A risk of breakage of a sample holder can be reduced and a biochemical sample or a liquid sample can be observed easily and with a high observation throughput. A sample holder 101 holding a sample includes: a sample chamber including a first insulating thin film 110 and a second insulating thin film 111 that sandwich and hold the sample 200 in a liquid or gel form and face each other, a vacuum partition wall inside which the sample chamber holding the sample is fixed in a state in which the thin film is exposed to a surrounding atmosphere, and whose internal space is kept at a degree of vacuum at least lower than that of the sample room at the time of observation of the sample, a detection electrode 820 disposed to face the second insulating thin film in a state in which the sample chamber is fixed to the vacuum partition wall, and a signal detection unit 50 connected to the detection electrode.
    Type: Grant
    Filed: October 10, 2019
    Date of Patent: April 1, 2025
    Assignees: Hitachi High-Tech Corporation, National Institute of Advanced Industrial Science and Technology
    Inventors: Michio Hatano, Mitsuhiro Nakamura, Toshihiko Ogura
  • Publication number: 20250093326
    Abstract: Method for evaluating cardiomyocytes using Raman scattering: a Raman spectrum of cardiomyocytes artificially induced to differentiate from pluripotent stem cells is acquired, an intensity of Raman-scattered light for a protein containing at least one of heme b and heme c as a prosthetic group is acquired from the Raman spectrum, and a state of progress of maturation of the cardiomyocytes is evaluated on the basis of the intensity of the Raman-scattered light. Method for evaluating differentiation into cardiomyocytes using Raman scattering: cells which are pluripotent stem cells are artificially induced to differentiate into cardiomyocytes, a Raman spectrum of the cells induced to differentiate is acquired, an intensity of Raman-scattered light for at least one of heme b and heme c is acquired from the Raman spectrum, and a state of progress of differentiation of the cells into cardiomyocytes is evaluated on the basis of the intensity of the Raman-scattered light.
    Type: Application
    Filed: January 12, 2023
    Publication date: March 20, 2025
    Applicants: OSAKA UNIVERSITY, National Institute of Advanced Industrial Science and Technology
    Inventors: Katsumasa Fujita, Kazuki Bando, Li Liu, Junjun Li, Yoshiki Sawa, Shigeru Miyagawa, Yasunori Nawa, Satoshi Fujita
  • Publication number: 20250089356
    Abstract: A change in switching time due to temperature change is suppressed. A switching circuitry is provided with a resistance component having opposite characteristics to temperature dependence of a gate current of a power transistor which is switching-controlled by the switching circuitry, and a change in a gate current due to the temperature change is suppressed by a change in the above-described resistance component due to the temperature change.
    Type: Application
    Filed: October 25, 2024
    Publication date: March 13, 2025
    Applicant: National Institute of Advanced Industrial Science and Technology
    Inventors: Atsushi YAO, Mitsuo OKAMOTO, Fumiki KATO, Hiroshi SATO, Shinsuke HARADA, Hiroshi HOZOJI, Shinji SATO
  • Patent number: 12245513
    Abstract: Provided is a sheet-shape electrostatic sound pressure-electrical signal conversion device that is three-dimensionally deformable and has a low drive voltage. The sound pressure-electrical signal conversion device includes a polymer sheet sandwiched between a pair of electrodes facing each other, the polymer sheet is a dielectric film, at least one of the electrodes includes an insulating flexible substrate having a plurality of through-holes and a plurality of conductive fibers having one end fixed to the flexible substrate with a pressure sensitive adhesive, electrical conduction in an in-plane direction is formed by contact between the conductive fibers, the conductive fibers are vibrated by giving an electrical signal to the pair of electrodes or the conductive fibers are vibrated by receiving sound pressure to cause the pair of electrodes to output an electrical signal.
    Type: Grant
    Filed: June 12, 2020
    Date of Patent: March 4, 2025
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Manabu Yoshida, Naoki Shirakawa, Nobuko Fukuda
  • Publication number: 20250070210
    Abstract: This electrolyte, which contains a melamine compound and/or a polymer in which said melamine compound is used as a monomer, can effectively suppress the deterioration of a platinum catalyst in an air electrode.
    Type: Application
    Filed: December 16, 2022
    Publication date: February 27, 2025
    Applicant: National Institute of Advanced Industrial Science and Technology
    Inventors: Shin-ichi Yamazaki, Masafumi Asahi, Tsutomu Ioroi
  • Publication number: 20250066713
    Abstract: The present disclosure relates to a microorganism (NITE BP-03572) belonging to Rhodosporidiobolus azoricus or to a microorganism (NITE BP-03573) belonging to the genus Vanrija.
    Type: Application
    Filed: October 31, 2022
    Publication date: February 27, 2025
    Applicants: Kureha Corporation, National Institute Of Advanced Industrial Science And Technology
    Inventors: Tatsuyuki KOSHIYAMA, Yukihiro HIGASHIYAMA, Shun SATO, Tomotake MORITA, Azusa SAIKA, Kazunori USHIMARU
  • Patent number: 12189162
    Abstract: A wire-grid polarizer includes metal reflectors which are embedded in a large number of grooves formed in a one-dimensional grid pattern in the same direction and with the same period in the front surface of a transparent sheet, wherein the average width (a) of the metal reflectors is 200 nm or less, the ratio (b/a) of the average thickness (b) of the metal reflectors from the front side of the sheet to the tip in the backward direction to the above average width (a) is 4 to 25, in any cross-section perpendicular to the surface of the sheet, the shape of each of the metal reflectors in the vicinity of the tip in the thickness direction is such that it gradually becomes thinner in a linear or smoothly curved shape toward the tip, and the ratio of the average length (c) toward the tip of portions that gradually become thinner toward the tip to the above average width (a) is 1.2 or more.
    Type: Grant
    Filed: November 26, 2021
    Date of Patent: January 7, 2025
    Assignees: National Institute of Advanced Industrial Science and Technology, Mitsubishi Gas Chemical Trading, Inc.
    Inventors: Ryohei Hokari, Kazuma Kurihara, Kyohei Takakuwa, Akitaka Yamamoto, Yusuke Yamaguchi
  • Patent number: 12178939
    Abstract: A medical instrument in which an inorganic salt solid such as apatite into which a peptide hormone or the like is embedded is placed so that a metal or the like is coated therewith, in which the inorganic salt solid is provided by controlled delay co-precipitation or the like in an unstable supersaturated calcium phosphate solution, and the medical instrument is exposed to ionizing radiation at a dose sufficient for sterilization.
    Type: Grant
    Filed: January 30, 2020
    Date of Patent: December 31, 2024
    Assignees: Cell-Medicine, Inc., National Institute of Advanced Industrial Science and Technology, University of Tsukuba, Nihon Parkerizing Co., Ltd.
    Inventors: Tadao Ohno, Mayu Yasunaga, Atsuo Ito, Yu Sogo, Fumiko Kobayashi
  • Publication number: 20240418052
    Abstract: Provided is a joint assembly that selectively isolates an isolation target layer in an open hole drilled in the strata including a hydrocarbon-bearing reservoir and the isolation target layer, and is a production well manufacturing method and gas production method using the joint assembly. The joint assembly includes a tubular body to be inserted into the open hole to be positioned to penetrate the isolation target layer; and a light source disposed over entire circumference of an outer periphery of the body and configured to emit light to cure uncured photo-curable resin that is introduced between the body and a borehole wall of the open hole.
    Type: Application
    Filed: August 27, 2024
    Publication date: December 19, 2024
    Applicant: National Institute of Advanced Industrial Science and Technology
    Inventors: Jun YONEDA, Yusuke Jin, Koji Yamada, Hideki Minagawa, Kazunori Shinjo
  • Patent number: 12125926
    Abstract: The present invention realizes a hole-selective film provided with both hole selectivity and passivation characteristics. This production method for a semiconductor device is provided with a step for forming a titanium oxide film on a crystalline silicon layer by means of a thermal atomic layer deposition method, and a step for carrying out a hydrogen plasma process on the titanium oxide film.
    Type: Grant
    Filed: June 25, 2020
    Date of Patent: October 22, 2024
    Assignee: National institute of Advanced Industrial Science and Technology
    Inventors: Takuya Matsui, Hitoshi Sai
  • Publication number: 20240332281
    Abstract: A destructive breakdown mode that leads to the destruction of a device is suppressed, in the case where a gallium nitride-based high electron mobility transistor is used as a power device. A diode is connected in antiparallel to a HEMT, and this antiparallel connected diode is designed such that an avalanche breakdown occurs therein before the drain-source voltage, which is the difference between the drain potential applied to a drain electrode and the source potential applied to a source electrode, exceeds the withstand voltage of the HEMT.
    Type: Application
    Filed: June 7, 2024
    Publication date: October 3, 2024
    Applicant: National Institute of Advanced Industrial Science and Technology
    Inventors: Akira NAKAJIMA, Shinsuke HARADA, Kazutoshi KOJIMA
  • Publication number: 20240318003
    Abstract: Provided is a compound with a high biomass ratio (preferably a compound with a biomass ratio of 100%) obtained by using a natural pigment and having excellent color developability and light resistance. The compound is a compound in which a natural pigment of curcumin is bound to an organic acid has a number average molecular weight (Mn) of 400 to 4,950.
    Type: Application
    Filed: June 20, 2022
    Publication date: September 26, 2024
    Applicants: DIC Corporation, National Institute of Advanced Industrial Science and Technology
    Inventors: Takahiko Ootsubo, Hitoshi Sekine, Atsushi Yamamoto, Koji Nemoto, Masaru Yoshida, Masanori Tamura
  • Patent number: 12102007
    Abstract: This thermoelectric conversion module is formed by electrically connecting, by a conductive member, one end of an n-type thermoelectric conversion element having a negative Seebeck coefficient and having a half-Heusler structure to one end of a p-type thermoelectric conversion element containing an oxide having a positive Seebeck coefficient at a temperature of 25° C. or higher. The conductive member is connected to the n-type thermoelectric conversion element and the p-type thermoelectric conversion element through a connection layer containing a conductive metal comprising silver, and the connection layer is characterized by further containing an oxide to reduce the bond resistance between the n-type thermoelectric conversion element and/or the p-type thermoelectric conversion element.
    Type: Grant
    Filed: January 26, 2021
    Date of Patent: September 24, 2024
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventor: Ryoji Funahashi
  • Patent number: 12066507
    Abstract: Proposed is a phase shift introduction method, a structure, and a circuit device for eliminating or minimizing a risk associated with dissimilar materials, solving in principle a problem of mixing of a signal current and a control current that occurs due to DC connection of a phase shifter to a signal line, and stably and reliably providing a phase shift that is desired to be introduced without being adversely effected by noise generated by an ambient magnetic field, which is generated due to use of an external power supply. A structure according to the present invention includes a phase shifter 101 and a closed-loop circuit 103 that is directly used for computation or storage, and a quantum phase shift is generated in the closed-loop circuit 103 by using a fractional flux quantum captured by the phase shifter 101 that is DC-separated from the closed-loop circuit 103.
    Type: Grant
    Filed: November 26, 2020
    Date of Patent: August 20, 2024
    Assignees: National Institute of Advanced Industrial Science and Technology, NATIONAL INSTITUTE FOR MATERIALS SCIENCE, Tokyo University of Science Foundation
    Inventors: Yasumoto Tanaka, Hirotake Yamamori, Takashi Yanagisawa, Shunichi Arisawa, Taichiro Nishio
  • Publication number: 20240275012
    Abstract: An object is to provide a stepped impedance resonator capable of efficiently reducing a footprint. A resonator includes a coplanar waveguide and a section. The coplanar waveguide has a first impedance. The section has a second impedance different from the first impedance and includes a fishbone waveguide. The resonator is configured as a stepped impedance resonator in which the coplanar waveguide and the section including the fishbone waveguide are connected in series.
    Type: Application
    Filed: February 12, 2024
    Publication date: August 15, 2024
    Applicants: NEC CORPORATION, National Institute of Advanced Industrial Science and Technology
    Inventors: Yohei KAWAKAMI, Tomohiro Yamaji, Yoshiro Urade, Aiko Yamaguchi
  • Publication number: 20240266351
    Abstract: A semiconductor device includes, on an n-type semiconductor substrate, a power transistor, an n-type transistor, and a p-type transistor on a laminated semiconductor substrate that laminates an n-type drift layer, a p-type; the power transistor has a trench gate electrode penetrating through the base layer; the p-type transistor is formed in an n-type well region formed in the base layer, and the n-type transistor is formed in a p-type well region further formed in the base layer or n-type well region; and a p-type impurity concentration of the buried channel region of the p-type transistor is equal to a p-type impurity concentration of the base layer.
    Type: Application
    Filed: April 28, 2022
    Publication date: August 8, 2024
    Applicant: National Institute of Advanced Industrial Science and Technology
    Inventors: Mitsuo OKAMOTO, Atsushi YAO, Hiroshi SATO, Shinsuke HARADA
  • Patent number: 12030122
    Abstract: Provided is a method of manufacturing a soft magnetic dust core. The method includes: preparing coated powder including amorphous powder made of an Fe-B-Si-P-C-Cu-based alloy, an Fe-B-P-C-Cu-based alloy, an Fe-B-Si-P-Cu-based alloy, or an Fe-B-P-Cu-based alloy, with a first initial crystallization temperature Tx1 and a second initial crystallization temperature Tx2; and a coating formed on a surface of particles of the amorphous powder; applying a compacting pressure to the coated powder or a mixture of the coated powder and the amorphous powder at a temperature equal to or lower than Tx1?100 K; and heating to a maximum end-point temperature equal to or higher than Tx1?50 K and lower than Tx2 with the compacting pressure being applied.
    Type: Grant
    Filed: October 21, 2020
    Date of Patent: July 9, 2024
    Assignees: JFE STEEL CORPORATION, TOKIN CORPORATION, National Institute of Advanced Industrial Science and Technology
    Inventors: Naomichi Nakamura, Makoto Nakaseko, Takuya Takashita, Mineo Muraki, Hoshiaki Terao, Raita Wada, Akiri Urata, Yu Kanamori, Makoto Yamaki, Koichi Okamoto, Toshinori Tsuda, Shoichi Sato, Kimihiro Ozaki
  • Patent number: 12024532
    Abstract: The present invention provides a method for producing a silanol compound capable of efficiently producing a silanol compound. The method for producing a silanol compound includes a proton exchange step of forming a silanol compound having a structure represented by following formula (c) by reacting a silicate having a structure represented by following formula (a) with an acidic compound having an acid dissociation constant pKa of ?1 to 20 in dimethyl sulfoxide (DMSO). (In formula (a), Qi+ represents an i-valent cation and i represents an integer of 1 to 4).
    Type: Grant
    Filed: September 10, 2021
    Date of Patent: July 2, 2024
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Masayasu Igarashi, Kazuhiko Sato, Fujio Yagihashi, Tomohiro Matsumoto, Takeshi Nozawa, Shigeru Shimada
  • Publication number: 20240202560
    Abstract: A magnetic flux bias circuit includes an input signal line to which an input signal indicating an applied magnetic flux using a digital value is input, a first current control line, a second current control line, and a third current control line to which a clock signal according to the input signal is input, a digital/analog conversion unit converting the input signal into an analog signal using a circuit including a quantum flux parametron circuit on the basis of the input signal input to the input signal line and the clock signal input to the first current control line, the second current control line, and the third current control line, and a magnetic flux application unit applying an applied magnetic flux to a controlled object on the basis of the analog signal output from the digital/analog conversion unit.
    Type: Application
    Filed: April 13, 2022
    Publication date: June 20, 2024
    Applicants: NEC CORPORATION, National Institute of Advanced Industrial Science and Technology
    Inventors: Naoki TAKEUCHI, Nobuyuki YOSHIKAWA, Yoshihito HASHIMOTO, Tsuyoshi YAMAMOTO, Fuminori HIRAYAMA