Abstract: A method for operating a memory device includes performing a single read operation that includes additional one or more combinations of read and/or write cycles, and performing a single write operation that includes additional one or more combinations of read and/or write cycles. For example, a method for auto-correcting errors in a memory device having plurality of memory cells includes performing a first read operation of the memory cell to obtain a first read data value, performing a first write operation to the memory cell to write a second data value, which is a complement of the first data value, into the memory cell, performing a second read operation of the memory cell to obtain a third data value, and performing a second write operation to the memory cell to write a fourth data value, which is a complement of the third data value, to the memory cell.

Abstract: A method for operating a memory device includes performing a single read operation that includes additional one or more combinations of read and/or write cycles, and performing a single write operation that includes additional one or more combinations of read and/or write cycles. For example, a method for auto-correcting errors in a memory device having plurality of memory cells includes performing a first read operation of the memory cell to obtain a first read data value, performing a first write operation to the memory cell to write a second data value, which is a complement of the first data value, into the memory cell, performing a second read operation of the memory cell to obtain a third data value, and performing a second write operation to the memory cell to write a fourth data value, which is a complement of the third data value, to the memory cell.