Abstract: A cold-cathode type ion-beam source with a closed-loop ion-emitting slit and electrons drifting in crosses electric and magnetic fields is characterized by the absence of a metal anode which is replaced by a pair of positively charged bodies, such as concentric rings of a conductive material which are located inside a hollow housing of the ion source and are connected to a source of a positive potential. The ion-emitting slit is located between these rings in an upstream position in the direction of propagation of the ion beam. Replacement of a metallic anode with an anodic plasma, i.e., with a “virtual anode”, which is formed by a Penning-type discharge, descreases contamination of the ion beam by products of erosion of a metallic anode and increases the ion beam current, which results in more effective ionization of the workout gas.

Abstract: The invention provides a sputtering system which consists of an ion beam and a target of a sputterable material. A distinguishing feature of the system of the invention is that the sputtering target forms a guide channel for an ion beam and sputtered particles, so that a portion of the ions collides with the walls of the target inside a closed volume of the target and forms neutral sputterable particles impinging the object. The other part of the ions goes directly to the object and participates in an ion-assisted overcoating. Thus, the special form of the target improves efficiency of sputtering, prevents scattering and the loss of the sputterable material. The system can be realized in various embodiments. One of the embodiments provides a multiple-cell system in which each cell has an individual ion-emitting slit formed by the end of a cathode rod of one cathode plate and the opening in the second cathode plate.

Abstract: A combined ion-source and sputtering magnetron apparatus of the invention comprises a vacuum working chamber that contains a sputtering magnetron, an object to be treated fixed inside the housing of the chamber, and an ion-beam source installed within the working chamber between the object and the sputtering magnetron. In a preferred embodiment, the ion source is a cold-cathode ion source with a closed loop ion-emitting slit and drift of electrons in crossed electric and magnetic fields. The ion source emits the ion beam in the radial inward or outward direction onto the surface of the magnetron target at an oblique angle to the target surface. The bombardment of the target surface with the ion beam generates a large amount of sputtered particles. In addition, the ion bombardment forms a large amount of secondary electrons which are accelerated in the direction away from the target and are held in the crossed electric and magnetic fields of the magnetron target.

Abstract: A method for combined treatment of an object simultaneously with an ion beam and a magnetron plasma consists in that an object, e.g., a semiconductor substrate, is treated with ions of a working gas emitted from an ion-beam source and with particles of a sputterable material directed toward the object in the same direction as the ion beam. The method is carried our by means of an apparatus that comprises a combination of a sputtering magnetron with an ion-beam source. According to several embodiments, the cathode of the ion source is separated into two parts electrically isolated from each other by a closed-loop ion-emitting slit and by isolation pads. The sputterable target is placed either onto the entire cathode or onto part thereof which is charged negatively with respect to another part which is grounded. During the operation of the apparatus, ion beam emitted from the ion source acts as a viral anode with respect to the magnetron target.

Abstract: The ion source of the invention emits ion beams radially inwardly or radially outwardly from the entire periphery of the closed-loop ion-emitting slit. In one embodiment, a tubular or oval-shaped hollow body, which also functions as a cathode, contains a similarly-shaped concentric anode spaced from the inner walls of the cathode at a distance required to form an ion-generating and accelerating space. The cathode has a continuous ion-emitting slit which is aligned with the position of the anode and is concentric thereto. A magnetic-field generation means is located inside the ring-shaped anode. When the ion source is energized by inducing an magnetic field, connecting the anode to a positive pole of the electric power supply unit, the cathode to a negative pole of the power supply unit, and supplying a working medium into the hollow housing, the electrons begin to drift in the annular space between the anode and cathode in the same direction in which the ions are emitted from the annular slit.

Abstract: A cold-cathode ion source with a closed-loop ion-emitting slit which is provided with means for generating a cyclically-variable, e.g., alternating or pulsating electric or magnetic field in an anode-cathode space. These means may be made in the form of an alternating-voltage generator which generates alternating voltage on one of the cathode parts that form the ion-emitting slit, whereas the other slit-forming part is grounded. The alternating voltage deviates the ion beam in the slit with the same frequency of the alternating voltage. In accordance with another embodiment, the aforementioned means may be an electromagnetic coil which generates a magnetic field which passes through the ion-emitting slit, thus acting on the condition of the spatial-charge formation and, hence, on concentration of ions in the ion beam. The cold-cathode ion source may be of any type, i.e.

Abstract: A universal cold-cathode type ion source with a closed-loop electron drifting source and with an ion-beam propagation direction perpendicular to the plane of electron drifting is intended for uniformly treating stationary or moveable objects with such processes as cleaning, activation, polishing, thin-film coating, or etching. The ion source of the invention allows adjustment of beam parameters and configurations and has an ion emitting slit of an adjustable geometry. In one embodiment, the adjustment is carried out by changing the width of the slit by shifting moveable parts of the cathode in the direction perpendicular to the direction of the ion beam. In another embodiment the slit configuration is adjusted by shifting a moveable part of the cathode in the direction of the beam propagation. The invention also provides a method for adjusting the shape and configuration of the ion beam with respect to the object to be treated.